Quantum Optoelectronics

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Growth and assessment of InGaN quantum dots in a microcavity: A blue single photon source

Materials Science and Engineering: B 147:2-3 (2008) 108-113

Authors:

RA Oliver, AF Jarjour, RA Taylor, A Tahraoui, Y Zhang, MJ Kappers, CJ Humphreys

Abstract:

Using a modified droplet epitaxy approach in metal-organic vapour phase epitaxy (MOVPE), we have grown InGaN quantum dots (QDs) on top of a 20-period AlN/GaN distributed Bragg reflector (DBR). The QDs were located at the centre of a ca. 182 nm GaN layer. To complete the cavity a three-period SiOx/SiNx DBR was deposited onto the GaN surface. Despite the evolution of roughness during the growth of the AlN/GaN DBR, due to cracking of the AlN layers, a cavity mode was observed, with a quality-factor of ∼50. Enhanced single QD emission was observed in micro-photoluminescence studies of the sample, and photon-correlation spectra provided evidence for single photon emission. © 2007 Elsevier B.V. All rights reserved.
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Growth and assessment of InGaN quantum dots in a microcavity: A blue single photon source

MAT SCI ENG B-SOLID 147:2-3 (2008) 108-113

Authors:

RA Oliver, AF Jarjour, RA Taylor, A Tahraoui, Y Zhang, MJ Kappers, CJ Humphreys

Abstract:

Using a modified droplet epitaxy approach in metal-organic vapour phase epitaxy (MOVPE), we have grown InGaN quantum dots (QDs) on top of a 20-period AlN/GaN distributed Bragg reflector (DBR). The QDs were located at the centre ofa ca. 182 nm GaN layer. To complete the cavity a three-period SiOx/SiNx DBR was deposited onto the GaN surface. Despite the evolution of roughness during the growth of the AlN/GaN DBR. due to cracking of the AlN layers, a cavity mode was observed, with a quality-factor of similar to 50. Enhanced single QD emission was observed in micro-photoluminescence studies of the sample, and photon-correlation spectra provided evidence for single photon emission. (C) 2007 Elsevier B.V. All rights reserved.
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Abnormal photoluminescence properties of GaN nanorods grown on Si(111) by molecular-beam epitaxy

NANOTECHNOLOGY 19:47 (2008) ARTN 475402

Authors:

Young S Park, Tae W Kang, RA Taylor
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Electrically driven single InGaN/GaN quantum dot emission

APPLIED PHYSICS LETTERS 93:23 (2008) ARTN 233103

Authors:

Anas F Jarjour, Robert A Taylor, Rachel A Oliver, Menno J Kappers, Colin J Humphreys, Abbes Tahraoui
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Fabrication of Ultrathin Single-Crystal Diamond Membranes

ADVANCED MATERIALS 20:24 (2008) 4793-+

Authors:

Barbara A Fairchild, Paolo Olivero, Sergey Rubanov, Andrew D Greentree, Felix WaIdermann, Robert A Taylor, Ian Walmsley, Jason M Smith, Shane Huntington, Brant C Gibson, David N Jamieson, Steven Prawer
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