Non-linear excitation and correlation studies of single InGaN quantum dots
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 4 6:4 (2009) 864-+
Optical properties of Er3+ in fullerenes and in β-PbF2 single-crystals
OPTICAL MATERIALS 32:1 (2009) 251-256
Quantum confined Stark effect and corresponding lifetime reduction in a single InxGa1-xN quantum disk
APPLIED PHYSICS LETTERS 95:18 (2009) ARTN 181910
Electrically driven single InGaN/GaN quantum dot emission
Applied Physics Letters 93:23 (2008)
Abstract:
Electroluminescence from single nitride-based quantum dots is reported. Clear single quantum dot emission is observed, which persists up to ∼85 K. This is achieved through the study of a quantum dot layer in the intrinsic region of a forward-biased vertical p-i-n diode. The current-voltage characteristic of the devices is examined at 4.3 K and observed to exhibit electrical bistability phenomena, which is explained in terms of charge accumulation in the InGaN layer. The dependence of the emission properties on current injection conditions are presented and related to the electrical properties of the device. © 2008 American Institute of Physics.Fabrication of ultrathin single-crystal diamond membranes
Advanced Materials 20:24 (2008) 4793-4798