Quantum Optoelectronics

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Growth and assessment of InGaN quantum dots in a microcavity: A blue single photon source

MAT SCI ENG B-SOLID 147:2-3 (2008) 108-113

Authors:

RA Oliver, AF Jarjour, RA Taylor, A Tahraoui, Y Zhang, MJ Kappers, CJ Humphreys

Abstract:

Using a modified droplet epitaxy approach in metal-organic vapour phase epitaxy (MOVPE), we have grown InGaN quantum dots (QDs) on top of a 20-period AlN/GaN distributed Bragg reflector (DBR). The QDs were located at the centre ofa ca. 182 nm GaN layer. To complete the cavity a three-period SiOx/SiNx DBR was deposited onto the GaN surface. Despite the evolution of roughness during the growth of the AlN/GaN DBR. due to cracking of the AlN layers, a cavity mode was observed, with a quality-factor of similar to 50. Enhanced single QD emission was observed in micro-photoluminescence studies of the sample, and photon-correlation spectra provided evidence for single photon emission. (C) 2007 Elsevier B.V. All rights reserved.
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Abnormal photoluminescence properties of GaN nanorods grown on Si(111) by molecular-beam epitaxy

NANOTECHNOLOGY 19:47 (2008) ARTN 475402

Authors:

Young S Park, Tae W Kang, RA Taylor
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Electrically driven single InGaN/GaN quantum dot emission

APPLIED PHYSICS LETTERS 93:23 (2008) ARTN 233103

Authors:

Anas F Jarjour, Robert A Taylor, Rachel A Oliver, Menno J Kappers, Colin J Humphreys, Abbes Tahraoui
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Fabrication of Ultrathin Single-Crystal Diamond Membranes

ADVANCED MATERIALS 20:24 (2008) 4793-+

Authors:

Barbara A Fairchild, Paolo Olivero, Sergey Rubanov, Andrew D Greentree, Felix WaIdermann, Robert A Taylor, Ian Walmsley, Jason M Smith, Shane Huntington, Brant C Gibson, David N Jamieson, Steven Prawer
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Properties of selective-area-growth GaN grown on various buffered Si(111) substrates by HVPE

J KOREAN PHYS SOC 51 (2007) S220-S224

Authors:

DH Shin, MK Bae, SN Yi, JH Na, KH Lee, RA Taylor, SH Doh, SH Park

Abstract:

Selective area growth (SAG) of GaN by hydride vapor phase epitaxy (HVPE) has been performed on SiO2 stripe-mask-patterned Si(111) substrates with various buffer layers. AlGaN, GaN and AIN films were used as buffer layers. In order to grow selectively, the orientation of the SiO2 mask pattern was opened along the Si (110) direction. The properties of the SAG-GaN samples were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and photoluminescence(PL). SEM images show that hexagonal SAG-GaN grows vertically along the < 0001 > direction, longitudinally along the < 11 (2) over bar0 > direction with facets on the sidewall growing along the (1 (1) over bar 01) direction. It was found that the lateral-to-vertical growth ratio depended strongly on different buffer layers.
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