Quantum Optoelectronics

Abstract:

The authors report on the generation of single photons in the blue spectral region from a single InGaNGaN quantum dot. The collection efficiency was enhanced by embedding the quantum dot layer in the middle of a low- Q microcavity. The microphotoluminescence is observed to be approximately ten times stronger than typical InGaN quantum dot emission without a cavity. The measurements were performed using nonlinear excitation spectroscopy in order to suppress the background emission from the underlying wetting layer. © 2007 American Institute of Physics.

Abstract:

We report a detailed study of the magnetophotoluminescence of single-wall carbon nanotubes at various temperatures in fields up to 58 T. We give direct experimental evidence of the diameter dependence of the Aharanov-Bohm phase-induced band gap shifts. Large increases in intensity are produced by the magnetic field at low temperatures which are also significantly chiral index [(n,m)] dependent. These increases are attributed to the magnetic field induced mixing of the wave functions of the exciton states. A study of the emission from nanotubes aligned perpendicular to the applied magnetic field shows even larger field-induced photoluminescence intensity enhancements and unexpectedly large redshifts in band gap energies, not predicted theoretically. © 2007 The American Physical Society.

Abstract:

The great success that GaN-based structures have enjoyed in implementing efficient optoelectronic devices has fostered a rapidly expanding interest amongst researchers aimed at understanding their underlying physics. There has been an active debate on the mechanisms that give rise to efficient luminescence in these materials. In this paper we approach these questions through optical studies of single InGaN/GaN quantum dots in the context of the available experimental and theoretical understanding of InGaN structures in general, and of three-dimensional localization in this material in particular. We will also show how it is possible to exploit the various unique properties that nitride-based materials offer, such as the strong inbuilt electric field, in a controlled manner. Such control may in the future prove essential for the implementation of single quantum dot devices in applications such as quantum information processing. We also show how nonlinear spectroscopy provides an invaluable tool in suppressing background luminescence effects inherent in this material.