Quantum Optoelectronics

Research group

Research theme

Sub department

About

Dynamics of resonantly excited excitons in GaN

PHYSICAL REVIEW B 58:24 (1998) 15973-15976

Authors:

S Hess, F Walraet, RA Taylor, JF Ryan, B Beaumont, P Gibart
More details from the publisher

Efficient intersubband scattering via carrier-carrier interaction in quantum wells

PHYSICAL REVIEW LETTERS 80:9 (1998) 1940-1943

Authors:

M Hartig, S Haacke, PE Selbmann, B Deveaud, RA Taylor, L Rota
More details from the publisher

Improving the signal-to-noise ratio of femtosecond luminescence upconversion by multichannel detection

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS 15:4 (1998) 1410-1417

Authors:

S Haacke, RA Taylor, I Bar-Joseph, MJSP Brasil, M Hartig, B Deveaud
More details from the publisher

Optical gain in GaN epilayers

APPLIED PHYSICS LETTERS 73:2 (1998) 199-201

Authors:

S Hess, RA Taylor, JF Ryan, B Beaumont, P Gibart
More details from the publisher

Time-resolved bandgap renormalization and gain in GaN epilayers

(1998) 300-303

Authors:

S Hess, RA Taylor, JF Ryan, B Beaumont, P Gibart, NJ Cain, V Roberts, JS Roberts

Abstract:

We present optical gain and loss spectra measured over a range of carrier densities at low temperature in hexagonal GaN epilayers. We have determined the optical loss directly to be similar to 80 cm(-1). Photoluminescence spectra show that stimulated emission in our samples arises from electron-hole plasma recombination. Time-resolved pump-probe transmission experiments have shown that there is considerable bandgap renormalization for carrier densities at which stimulated emission occurs.
More details