Terahertz photonics

Abstract:

Pronounced polarization anisotropy in semiconductor nanowires has been exploited to achieve polarization-sensitive devices operating across the electromagnetic spectrum, from the ultraviolet to the terahertz band. This contribution describes the physical origins of optical and electrical anisotropy in nanowires. Polarization anisotropy arising from dielectric contrast, and the behaviour of (nano)wire grid polarizers, are derived from first principles. This review discusses experimental observations of polarization-sensitive light–matter interactions in nanowires. It then describes how these phenomena are employed in devices that detect or modulate polarized terahertz radiation on ultrafast timescales. Such novel terahertz device concepts are expected to find use in a wide variety of applications including high-speed terahertz-band communications and molecular fingerprinting.

Abstract:

Mixed-halide perovskites offer ideal bandgaps for tandem solar cells, but photoinduced halide segregation compromises photovoltaic device performance. This study explores the influence of a hole-transport layer, necessary for a full device, by monitoring halide segregation through in situ, concurrent X-ray diffraction and photoluminescence measurements to disentangle compositional and optoelectronic changes. This work demonstrates that top coating FA0.83Cs0.17Pb(Br0.4I0.6)3 perovskite films with a poly(triaryl)amine (PTAA) hole-extraction layer surprisingly leads to suppression of halide segregation because photogenerated charge carriers are rapidly trapped at interfacial defects that do not drive halide segregation. However, the generation of iodide-enriched regions near the perovskite/PTAA interface enhances hole back-transfer from the PTAA layer through improved energy level offsets, increasing radiative recombination losses. It is further found that while passivation with a piperidinium salt slows halide segregation in perovskite films, the addition of a PTAA top-coating accelerates such effects, elucidating the specific nature of trap types that are able to drive the halide segregation process. This work highlights the importance of selective passivation techniques for achieving efficient and stable wide-bandgap perovskite photovoltaic devices.

Abstract:

Despite the incredible progress made, the highest efficiency perovskite solar cells are still restricted to small areas (<1 cm2). In large part, this stems from a poor understanding of the widespread spatial heterogeneity in devices. Conventional techniques to assess heterogeneities can be time consuming, operate only at microscopic length scales, and demand specialized equipment. We overcome these limitations by using luminescence imaging to reveal large, millimeter-scale heterogeneities in the inferred electronic properties. We determine spatially resolved maps of “charge collection quality”, measured using the ratio of photoluminescence intensity at open and short circuit. We apply these methods to quantify the inhomogeneities introduced by a wide range of transport layers, thereby ranking them by suitability for upscaling. We reveal that top-contacting transport layers are the dominant source of heterogeneity in the multilayer material stack. We suggest that this methodology can be used to accelerate the development of highly efficient, large-area modules, especially through high-throughput experimentation.

Abstract:

Owing to the bandgap-bowing effect, mixed lead-tin halide perovskites provide ideal bandgaps for the bottom subcell of all-perovskite tandem photovoltaic devices that offer fundamentally elevated power-conversion efficiencies. However, these materials suffer from degradation in ambient air, which worsens their optoelectronic properties and hinders their usability for photovoltaic applications. Such degradation pathways are not yet fully understood, especially for the perovskites in the middle of the APbxSn1-xI3 solid solution line, which offer the narrowest bandgaps across the range. This study unravels the degradation mechanisms of APbxSn1-xI3 perovskites, reporting clear differences between mixed lead-tin (x = 0.5) and tin-only (x = 0) perovskites. The dynamic optoelectronic properties, electronic structure, crystal structure, and decomposition products of the perovskite thin films are examined in situ during air exposure. Both perovskite compositions suffer from the formation of defects over the timescale of hours, as indicated by a significant reduction in their charge-carrier diffusion lengths. For tin-only perovskite, degradation predominantly causes the formation of energetically shallow tin vacancies and hole doping. However, for mixed lead-tin perovskite, deep trap states are formed that significantly accelerate charge-carrier recombination, yet leave mobilities relatively unaffected. These findings highlight the need for passivation strategies tailored specifically to mixed lead-tin iodide perovskites.