Terahertz photonics

Abstract:

We have used a three-dimensional pseudo-classical Monte Carlo simulation to investigate the effects of As+ ion-implantation on pulsed terahertz radiation emitters. Devices based on surface-field emitters and photoconductive switches have been modelled. Two implantations of As+ ions at 1.0 MeV and 2.4 MeV were found to produce a uniform distribution of vacancies over the volume of GaAs contributing to THz generation in these devices. We calculate that ionimplantation increases the THz bandwidth of the devices with the cost of decreasing the spectral intensity at lower THz frequencies.

Abstract:

The fabrication of nanoscale molecular devices is becoming increasingly important and research into their fabrication has intensified over the last few years. In particular, the attachment of molecular objects onto various surfaces has attracted considerable attention. Here, we report a multistep surface immobilization procedure, which allows the specific and controlled attachment of very long DNA molecules onto gold electrodes. Further, we report the effect of dielectrophoresis on these surface-bound DNA molecules with respect to amplitude and frequency, and we show that selected surface-immobilized DNA molecules can be manipulated by dielectrophoresis. Finally, we investigated the use of dielectrophoresis in conjunction with the multistep surface immobilization of fluorescently labelled, surface-bound γ-DNA in a basic data-storage device.

Abstract:

The terahertz region of the electromagnetic spectrum spans the frequency range between the mid-infrared and the millimetre/microwave. This region has not been exploited fully to date owing to the limited number of suitable (in particular, coherent) radiation sources and detectors. Recent demonstrations, using pulsed near-infrared femtosecond laser systems, of the viability of THz medical imaging and spectroscopy have sparked international interest; yet much research still needs to be undertaken to optimize both the power and bandwidth in such THz systems. In this paper, we review how femtosecond near-infrared laser pulses can be converted into broad band THz radiation using semiconductor crystals, and discuss in depth the optimization of one specific generation mechanism based on ultra-fast transport of electrons and holes at a semiconductor surface. We also outline a few of the opportunities for a technology that can address a diverse range of challenges spanning the physical and biological sciences, and note the continuing need for the development of solid state, continuous wave, THz sources which operate at room temperature.

Abstract:

A compact, high-power emitter of half-cycle terahertz (THz) radiation is demonstrated. The device consists of an epitaxial InAs emitter upon a GaAs prism and produces THz pulses that are 20 times more powerful than those from conventional planar InAs emitters. This improvement is a direct result of reorienting the transient THz dipole such that its axis is not perpendicular to the emitting surface. © 2002 Optical Society of America.