Terahertz photonics

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Carrier dynamics in ion-implanted GaAs studied by simulation and observation of terahertz emission

(2005)

Authors:

J Lloyd-Hughes, E Castro-Camus, MD Fraser, C Jagadish, MB Johnston
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Simulation and optimisation of terahertz emission from InGaAs and InP photoconductive switches

(2005)

Authors:

J Lloyd-Hughes, E Castro-Camus, MB Johnston
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Polarization-sensitive terahertz detection by multicontact photoconductive receivers

Applied Physics Letters 86 (2005) 254102 3pp

Authors:

MB Johnston, E. Castro-Camus, J. Lloyd-Hughes, M. D. Fraser
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Polarisation-sensitive terahertz detectors

(2005) 582-583

Authors:

MB Johnston, E Castro-Camus, J Lloyd-Hughes, MD Fraser, HH Tan, C Jagadish

Abstract:

We have developed a detector of coherent terahertz (THz) radiation that can recover the full polarisation state of a THz transient. The device is a three-contact photoconductive receiver, which is capable of recording two time-varying electric field components of a THz pulse simultaneously. Our receiver was fabricated on Fe+ implanted InP and showed a cross-polarised extinction ratio greater than 100:1. The detector will be useful for spectroscopy of birefringent and optically active materials.
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Emission of collimated THz pulses from photo-excited semiconductors

Semiconductor Science and Technology 19:4 SPEC. ISS. (2004)

Authors:

MB Johnston, A Dowd, R Driver, EH Linfield, AG Davies, DM Whittaker

Abstract:

It is shown experimentally that surface-field terahertz (THz) emitters can produce well-collimated beams of THz radiation, making them useful devices for time-domain spectroscopy applications. Simulations of the carrier-dynamics are used to explain the mechanism of THz generation in InAs and GaAs, and it is shown that inter-valley scattering of electrons must be considered in order to fully describe THz emission from InAs.
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