Terahertz photonics

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Detecting the full polarisation state of terahertz transients

(2006)

Authors:

E Castro-Camus, J Lloyd-Hughes, MD Fraser, HH Tan, C Jagadish, MB Johnston
More details from the publisher

Polarisation-Sensitive THz Detectors

(2006)

Authors:

MB Johnston, E Castro-Camus, J Lloyd-Hughes, MD Fraser, HH Tan, C Jagadish
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Simulation and optimization of arsenic-implanted THz emitters

(2006)

Authors:

MB Johnston, J Lloyd-Hughes, E Castro-Camus, MD Fraser, C Jagadish
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Photoconductive detection of arbitrary polarised terahertz pulses

(2006)

Authors:

E Castro-Camus, J Lloyd-Hughes, MB Johnston, MD Fraser, HH Tan, C Jagadish
More details from the publisher

Terahertz emission and lifetime measurements of ionimplanted semiconductors: Experiment and simulation

Optics InfoBase Conference Papers (2006)

Authors:

J Lloyd-Hughes, E Castro-Camus, MD Fraser, HH Tan, C Jagadish, MB Johnston

Abstract:

The spectral width of terahertz emission from ion-implanted terahertz emitters increases with ion damage, owing to ultrafast carrier capture. Carrier dynamics simulations reinforce these findings. Optical-pump, terahertz-probe experiments confirm the subpicosecond lifetimes of these materials. © 2006 Optical Society of America.