Thin film quantum materials

Abstract:

Magnetic skyrmions are topologically non-trivial, swirling magnetization textures that form lattices in helimagnetic materials. These magnetic nanoparticles show promise as high efficiency next-generation information carriers, with dynamics that are governed by their topology. Among the many unusual properties of skyrmions is the tendency of their direction of motion to deviate from that of a driving force; the angle by which they diverge is a materials constant, known as the skyrmion Hall angle. In magnetic multilayer systems, where skyrmions often appear individually, not arranging themselves in a lattice, this deflection angle can be easily measured by tracing the real space motion of individual skyrmions. Here we describe a reciprocal space technique which can be used to determine the skyrmion Hall angle in the skyrmion lattice state, leveraging the properties of the skyrmion lattice under a shear drive. We demonstrate this procedure to yield a quantitative measurement of the skyrmion Hall angle in the room-temperature skyrmion system FeGe, shearing the skyrmion lattice with the magnetic field gradient generated by a single turn Oersted wire.

Abstract:

Elemental tin in the α-phase is an intriguing member of the family of topological quantum materials. In thin films, with decreasing thickness, α-Sn transforms from a three-dimensional (3D) topological Dirac semimetal (TDS) to a two-dimensional (2D) topological insulator (TI). Getting access to and making use of their topological surface states is challenging and requires interfacing to a magnetically ordered material. Here, we report the successful epitaxial growth of α-Sn thin films on Co, forming the core of a spin-valve structure. We carried out time- and element-selective ferromagnetic resonance experiments to investigate the presence of spin pumping through the spin-valve structure. We applied a rigorous statistical analysis of the experimental data using a Landau-Lifshitz-Gilbert-Slonczewski equation based model. A strong exchange coupling contribution was found, however no unambiguous proof for spin pumping. Nevertheless, the incorporation of α-Sn into a spin-valve remains a promising approach given its simplicity as an elemental TI and its room temperature application potential.

Abstract:

We present a structural and density-functional theory study of the interface of the quasi-twin-free grown three-dimensional topological insulator Bi2Te3 on Ge(111). Aberration-corrected scanning transmission electron microscopy and electron energy-loss spectroscopy in combination with first-principles calculations show that the weak van der Waals adhesion between the Bi2Te3 quintuple layer and Ge can be overcome by forming an additional Te layer at their interface. The first-principles calculations of the formation energy of the additional Te layer show it to be energetically favorable as a result of the strong hybridization between the Te and Ge.