Thin film quantum materials

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Data for "Room-temperature helimagnetism in FeGe thin films"

University of Oxford (2017)

Abstract:

FMR, muSR, SQUID and REXS data
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Analytical STEM Study of Dy-doped Bi2Te3 Thin Films

European Microscopy Congress 2016: Proceedings, (Ed.). Wiley-VCH Verlag GmbH & Co. KGaA (2016) 1050-1051

Authors:

Vesna Srot, Piet Schönherr, Birgit Bussmann, Sara E Harrison, Peter A van Aken, Thorsten Hesjedal
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Topological insulators: Engineered heterostructures

Nature Materials Nature Publishing Group 16:1 (2016) 3-4

Authors:

Thorsten Hesjedal, Y Chen

Abstract:

The combination of topological properties and magnetic order can lead to new quantum states and exotic physical phenomena. In particular, the coupling between topological insulators and antiferromagnets enables magnetic and electronic structural engineering.
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Crystallization at Nanodroplet Interfaces in Emulsion Systems: A Soft-Template Strategy for Preparing Porous and Hollow Nanoparticles

Langmuir American Chemical Society (ACS) 32:49 (2016) 13116-13123

Authors:

H Samet Varol, Olaia Álvarez-Bermúdez, Paolo Dolcet, Barat Achinuq, Silvia Gross, Katharina Landfester, Rafael Muñoz-Espí
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Experimental and density functional study of Mn doped Bi₂Te₃ topological insulator

APL Materials American Institute of Physics 4:12 (2016) 126103-1

Authors:

Arsham Ghasemi, Demie Kepaptsoglou, Adriana I Figueroa, Genadi A Naydenov, Phil J Hasnip, Matt IJ Probert, Quentin Ramasse, Gerrit van der Laan, Thorsten Hesjedal, Vlado Lazarov

Abstract:

We present a nanoscale structural and density functional study of the Mn doped 3D topological insulator Bi2Te3. X-ray absorption near edge structure show that Mn has valency of nominally 2+. Extended x-ray absorption fine structure spectroscopy in combination with electron energy loss spectroscopy (EELS) shows that Mn is a substitutional dopant of Bi and Te and also resides in the van der Waals gap between the quintuple layers of Bi2Te3. Combination of aberration-corrected scanningtransmission electron microscopy and EELS show that Mn substitution of Te occurs in film regions with increased Mn concentration. First-principles calculations show that the Mn dopants favor octahedral sites and are ferromagnetically coupled.
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