Step-flow growth of Bi2Te3 nanobelts
Crystal Growth and Design American Chemical Society 16:12 (2016) 6961-6966
Abstract:
Understanding the growth mechanism of nanostructures is key to tailoring their properties. Many compounds form nanowires following the vapor-liquid-solid (VLS) growth mechanism, and the growth of Bi2Te3 nanobelts was also explained following the VLS route. Here, we present another growth mechanism of Bi2Te3 nano- and sub-micron belts and ribbons. The samples were grown by physical vapor transport from Bi2Te3 precursor using TiO2 nanoparticles as catalyst, and analyzed by scanning electron microscopy and scanning transmission electron microscopy. The growth starts from a Te-rich cluster, and proceeds via a thin, tip-catalyzed primary layer growing in the [110] direction. The primary layer serves as a support for subsequent step-flow growth. The precursor predominantly absorbs on the substrate and reaches the belt by migration from the base to the tip. Terrace edges pose energy barriers that enhance the growth rate of secondary layers compared to the primary layer. Broadening of the sidewalls is commonly observed and leads to triangular voids that can even result in a branching of the growing belts. Step-flow growth of Bi2Te3 sub-micron belts is different from the spiral-like growth mode of Bi2Te3 thin films, and an important step towards the growth of layered topological insulator nanostructures.Spin pumping in magnetic trilayer structures with an MgO barrier
Scientific Reports Nature Publishing Group 6 (2016) 35582
Abstract:
We present a study of the interaction mechanisms in magnetic trilayer structures with an MgO barrier grown by molecular beam epitaxy. The interlayer exchange coupling, Aex, is determined using SQUID magnetometry and ferromagnetic resonance (FMR), displaying an unexpected oscillatory behaviour as the thickness, tMgO, is increased from 1 to 4 nm. Transmission electron microscopy confirms the continuity and quality of the tunnelling barrier, eliminating the prospect of exchange arising from direct contact between the two ferromagnetic layers. The Gilbert damping is found to be almost independent of the MgO thickness, suggesting the suppression of spin pumping. The element-specific technique of x-ray detected FMR reveals a small dynamic exchange interaction, acting in concert with the static interaction to induce coupled precession across the multilayer stack. These results highlight the potential of spin pumping and spin transfer torque for device applications in magnetic tunnel junctions relying on commonly used MgO barriers.Controlling the half-metallicity of Heusler/Si(1 1 1) interfaces by a monolayer of Si–Co–Si
Journal of Physics Condensed Matter IOP Publishing 28:39 (2016) 395003
Chiral damping in magnetic domain-walls (Conference Presentation)
Proceedings of SPIE--the International Society for Optical Engineering SPIE, the international society for optics and photonics (2016) 993130-993130-1
Element specific spin and orbital moments of nanoscale CoFeB amorphous thin films on GaAs(100)
AIP Advances AIP Publishing 6:9 (2016) 095011