Thin film quantum materials

Abstract:

At the basis of future applications of spin electronics are ferromagnetic films that have a Curie temperature above room temperature, a crystal structure that allows for epitaxial growth on common semiconductor surfaces, and a high degree of spin polarization at the Fermi level. A class of ternary compounds, the so-called Heusler alloys, combine these requirements as they are lattice-matched to many compound semiconductors, have a compatible crystal structure (face-centered cubic), and show high Curie temperatures. Moreover, calculations suggested that some Heusler alloys may belong to the magnetic class of half-metals that is characterized by a 100% spin polarization at the Fermi level. We review the work on epitaxial-Heusler alloy films on semiconductor surfaces. Special emphasis is laid on molecular-beam epitaxy (MBE), as this growth method allows for an in situ control of the growth and structure of the material. Taking Co2FeSi on GaAs as an example, the structural and magnetic properties of MBE-grown samples will be discussed.

Abstract:

Strained MnAs films on GaAs(001) grown by molecular beam epitaxy exhibit unique micro-magnetic properties due to the strain-mediated coexistence of hexagonal ferromagnetic a-MnAs and orthorhombic paramagnetic β-MnAs arranged in selforganized periodic stripe patterns. To explore the internal structure of the magnetization, which is not accessible by the magnetic imaging techniques AFM and XMCDPEEM, detailed micromagnetic simulations are needed. Otherwise, physically unreasonable models would be developed. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA.

Abstract:

We report the high-aspect ratio patterning of epitaxial MnAs-on-GaAs(0 0 1) films. The control of strain is key since MnAs-on-GaAs(0 0 1) exhibits a strain-stabilized coexistence of two chemically, elastically and magnetically distinct phases forming a self-organized stripe structure over a temperature range of 10-40 °C. Anisotropic plasma etching allows for high-aspect ratios and good reproducibility. Using Ti films as an etch mask, arbitrarily oriented structures can be transferred into films of up to 300 nm thickness. The removal of the masking material is challenging as MnAs reacts with all common acids, alkalis and even water. Optimum results are obtained by etching the Ti mask in hydrofluoric acid at elevated temperatures (>50 °C), where MnAs is entirely in its β-phase. © 2006 IOP Publishing Ltd.

Abstract:

We report on apparently charged domain walls in MnAs-on-GaAs(0 0 1) layers. For head-on domains, described as two domains facing each other with opposite magnetization, the domain walls of ≳ 200 nm thick films exhibit a zig-zag pattern. Depending on the width of the ferromagnetic stripes, which is a function of temperature and thus the strain in the easy axis direction, the zig-zag angle 2 θ increases from 90{ring operator} in the case of wide stripes to 180{ring operator} (i.e., to a straight wall) for narrow stripes. The underlying domain structure was calculated using a three-dimensional micromagnetic simulator. The calculations reveal a number of distinct domain patterns as a result of the system's attempt to reduce its energy through the formation of closure domain-like patterns in the easy plane. A diamond-like state consisting of two intersecting sub-surface domain walls is the underlying magnetic structure resulting in the observed, apparently charged domain walls. The zig-zag pattern of the domain boundary is explained by stray field minimization of the diamond state along the stripe. © 2006 Elsevier B.V. All rights reserved.