Methane chemical vapor deposition on transition metal/GaAs samples - A possible route to Haeckelite carbon nanotubes?
Surface and Interface Analysis 44:4 (2012) 456-465
Abstract:
We present a systematic study of atmospheric chemical vapor deposition growth of carbon nanotubes (CNTs) on patterned, transition metal/GaAs samples employing methane as the carbon feedstock. Controlled CNT growth was found to occur from the exposed metal-semiconductor interface, rather than from the metal or semiconductor surfaces themselves. A fast sample loading system allowed for a minimization of the exposure to high temperatures, thereby preventing excessive sample damage. The optimum growth temperature for CrNi/GaAs interfaces is 700 °C (at a methane flow rate of 700 sccm). Possible growth scenarios involving the Ni-As-Ga system and its interaction with C is discussed. Raman spectroscopy of the CNTs revealed the presence of pentagon-heptagon defects. Closer analysis of the spectra points towards a mixture of so-called Haeckelite CNTs. © 2011 John Wiley & Sons, Ltd.Towards quantitative magnetic force microscopy: theory and experiment
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