Thin film quantum materials

Abstract:

We present variable-temperature magnetic force microscopy (VT-MFM) studies of epitaxially grown MnAs layers on GaAs(001). In MnAs, a structural and magnetic phase transition occurs at Tc ≈ 40 °C from the hexagonal, ferromagnetic α-phase below Tc to the orthorhombic, paramagnetic β-phase above Tc. In the investigated MnAs-GaAs system, both phases coexist over a temperature range of ≈ 30 °C below Tc due to the involved strain. Using MFM we are able to distinguish between the ferromagnetic and the paramagnetic phases by measuring topographic and magnetic contrast of the same sample area. For VT-MFM studies, we have employed a temperature stage that allows heating and cooling in a controlled atmosphere with small thermal drift (for this system, the temperature was varied from below 0 °C to above 45 °C). The ratio of the ferromagnetic to the paramagnetic phases shows a temperature hysteresis, i.e. the ratio is dependent on whether the sample was heated or cooled to reach the measurement temperature. Detailed studies of the domains and their arrangements over the hysteretic temperature cycle are shown and compared. Mainly three different domain types are found that are dominant in their respective temperature ranges.

Abstract:

The effect of strain on the local phase transition temperature of MnAs/ GaAs was discussed. It was found that the characteristics temperature T* at which the as-grown films transformed to the paramagnetic β-phase was locally shifted up towards the value of unstrained bulk MnAs. The analysis showed that the film areas exhibiting the higher T* were identified as the region in which the strain in the MnAs film was allowed to relax.

Abstract:

The magnetic out-of-plane component in MnAs/GaAs film was discussed. Its temperature dependence was substantially different from the dominating in-plane magnetization. The analysis showed that the out-of-plane component was due to small isolated magnetic 'grains' within the film.

Abstract:

Self organized etching techniques for fabricating a quasiregular array of MnAs nanoislands were discussed. The strain balance in the MnAs layer grown on GaAs substrates collapsed when the heterostructure was immersed in a wet-chemical etch solution and regular row of cracks and submicron-wide strips were carved from it. It was also shown that MnAs islands could serve as a nearly ideal etch mask to create GaAs columns by dry etching.