Dr Dharmalingam Prabhakaran

Abstract:

The symbiosis of strong interactions, flat bands, topology and symmetry has led to the discovery of exotic phases of matter, including fractional Chern insulators, correlated moiré topological superconductors, and Dirac and Weyl semimetals. Correlated metals, such as those present in Kondo lattices, rely on the screening of local moments by a sea of non-magnetic conduction electrons. Here, we report on a unique topological Kondo lattice compound, CeCo2P2, where the Kondo effect - whose existence under the magnetic Co phase is protected by PT symmetry - coexists with antiferromagnetic order emerging from the flat bands associated with the Co atoms. Remarkably, this is the only known Kondo lattice compound where magnetic order occurs in non-heavy electrons, and puzzlingly, at a temperature significantly higher than that of the Kondo effect. Furthermore, at low temperatures, the emergence of the Kondo effect, in conjunction with a glide-mirror-z symmetry, results in a nodal line protected by bulk topology near the Fermi energy. These unusual properties, arising from the interplay between itinerant and correlated electrons from different constituent elements, lead to novel quantum phases beyond the celebrated topological Kondo insulators and Weyl Kondo semimetals. CeCo2P2 thus provides an ideal platform for investigating narrow bands, topology, magnetism, and the Kondo effect in strongly correlated electron systems.

Abstract:

We report a detailed study of the magnetic field switching of ferrotoroidal/multiferroic domains in the Y-type hexaferrite compound Ba_0.5Sr_1.5Mg₂Fe₁₂O₂₂. By combining data from superconducting quantum interference device (SQUID) magnetometry, magnetocurrent measurements, and resonant x-ray scattering experiments, we arrive at a complete description of the deterministic switching, which involves the formation of a temperaturedependent mixed state in low magnetic fields. This mechanism is likely to be shared by other members of the hexaferrite family, and presents a challenge for the development of high-speed read-write memory devices based on these materials.