Investigation of single surface acoustic wave sources
Electronics Letters 36:22 (2000) 1903-1904
Abstract:
The first experimental investigation of a single gap surface acoustic wave (SAW) source on GaAs is reported. Using scanning acoustic force microscopy, SAWs are measured with sub-wavelength resolution and an unmatched sensitivity. Phase and amplitude images reveal the radiation characteristics of a single gap source, allowing for a deeper insight into SAW device operation and future design improvements.Simultaneous bimodal surface acoustic-wave velocity measurement by scanning acoustic force microscopy
Applied Physics Letters 77:5 (2000) 759-761
Abstract:
We present scanning acoustic force microscopy (SAFM) mixing experiments of differently polarized surface acoustic waves (SAW) with noncollinear propagation directions. The phase velocities of the SAWs are measured at a submicron lateral scale, employing a multimode SAFM that is capable of detecting the wave's normal and in-plane oscillation components. Hereby, the down conversion of the surface oscillations into cantilever vibrations due to the nonlinearity of the tip-sample interaction is utilized. The simultaneous determination of the phase velocities within a microscopic sample area is demonstrated for the mixing of Rayleigh and Love waves on the layered system SiO2/ST-cut quartz. © 2000 American Institute of Physics.Influence of ultrasonic surface acoustic waves on local friction studied by lateral force microscopy
Applied Physics A: Materials Science and Processing 70:3 (2000) 361-363
Abstract:
We studied dynamic friction phenomena introduced by ultrasonic surface acoustic waves using a scanning force microscope in the lateral force mode and a scanning acoustic force microscope. An effect of friction reduction was found when applying surface acoustic waves to the micromechanical tip-sample contact. Employing standing acoustic wave fields, the wave amplitude dependent friction variation can be visualized within a microscopic area. At higher wave amplitudes, a regime was found where friction vanishes completely. This behavior is explained by the mechanical diode effect, where the tip's rest position is shifted away from the surface in response to ultrasonic waves.Si in-diffusion during the 3D islanding of Ge/Si(001) at high temperatures
Applied Physics A: Materials Science and Processing 69:4 (1999) 467-470
Abstract:
The 3D islands of the Stranski-Krastanow system Ge/Si(001) that form either during the annealing of previously flat and nearly strain-relieved Ge films at 1020 K or directly at the Ge deposition at 1020 K are found to be composed of a mixture of Ge and Si, thus pointing to considerable interdiffusion at 1020 K. Direct measurement of the elastic energy unambiguously reveals that neither the 3D islanding nor the Si in-diffusion are driven by the reduction of misfit strain; this strain being the result of increasing configurational entropy.Spatially resolved measurement of transverse surface acoustic waves for the investigation of elastic properties
Surface and Interface Analysis 27:5 (1999) 558-561