Possibility of enhanced frequency response of intermixed InGaAs/GaAs and InGaAs/AlGaAs quantum well devices
Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD (1999) 352-354
Abstract:
Photoluminescence up conversion study of the intermixed InGaAs/GaAs and InGaAs/AlGaAs quantum wells showed that the capture of photo-excited carriers into the intermixed quantum wells is faster (25 ps) than capture into the non-intermixed quantum wells (45 ps). The reasons for this significant reduction in the capture time is related to modification of the shape of the intermixed quantum wells.Quantum well intermixing in InGaAs/(Al)GaAs by As and H irradiation
Institute of Electrical and Electronics Engineers (IEEE) (1999) 355-357
Interdiffused quantum-well infrared photodetectors for color sensitive arrays
APPLIED PHYSICS LETTERS 75:7 (1999) 923-925
Proton implantation and rapid thermal annealing effects on GaAs/AlGaAs quantum well infrared photodetectors
SUPERLATTICES AND MICROSTRUCTURES 26:5 (1999) 317-324
Proton irradiation-induced intermixing in InGaAs/(Al)GaAs quantum wells and quantum-well lasers
JOURNAL OF APPLIED PHYSICS 85:9 (1999) 6786-6789