Efficient generation of charges via below-gap photoexcitation of polymer-fullerene blend films investigated by terahertz spectroscopy
Physical Review B Condensed Matter and Materials Physics 78:11 (2008)
Abstract:
Using optical-pump terahertz-probe spectroscopy, we have investigated the time-resolved conductivity dynamics of photoexcited polymer-fullerene bulk heterojunction blends for two model polymers: poly[3-hexylthiophene] (P3HT) and poly[2-methoxy-5- (3,7 -dimethyloctyloxy)-1,4-phenylenevinylene] (MDMO-PPV) blended with [6,6]-phenyl-CPhotoconductive response correction for detectors of terahertz radiation
Journal of Applied Physics 104:5 (2008)
Abstract:
Photoconductive detectors are convenient devices for detecting pulsed terahertz radiation. We have optimized Fe+ ion-damaged InP materials for photoconductive detector signal to noise performance using dual-energy doses in the range from 2.5× 1012 to 1.0× 1016 cm-2. Ion implantation allowed the production of semiconducting materials with free-carrier lifetimes between 0.5 and 2.1 ps, which were measured by optical pump terahertz probe spectroscopy. The time resolved photoconductivity of the detector substrates was acquired as a function of time after excitation by 2 nJ pulses from a laser oscillator. These data, when combined with a deconvolution algorithm, provide an excellent spectral response correction to the raw photocurrent signal recorded by the photoconductive detectors. © 2008 American Institute of Physics.Terahertz photoconductivity of mobile electrons in nanoporous InP honeycombs
Physical Review B Condensed Matter and Materials Physics 78:8 (2008)
Abstract:
Nanostructured semiconductors with favorable optoelectronic properties can be created by electrochemical etching, a fabrication process that is scalable for mass market applications. Using terahertz photoconductivity measurements, we demonstrate that nanoporous InP has an unusually long carrier recombination lifetime that exceeds 100 ns at low temperatures and low carrier density, and an electron mobility half that of bulk InP. Modeling confirms that these observations result from band bending with holes confined to the surface and electrons away from the pores. © 2008 The American Physical Society.Low-energy collective dynamics of charge stripes in the doped nickelate La2-x Srx Ni O4+δ observed with optical conductivity measurements
Physical Review B - Condensed Matter and Materials Physics 77:19 (2008)
Abstract:
We have investigated charge dynamics in the static stripe ordered phase of La2-x Srx Ni O4+δ at lattice temperatures below the charge ordering transition, via optical conductivity measurements at low energies (1-10 meV). The thermally activated dynamic response of the charge stripes is found to be characteristic of a collective mode such as a pinned charge density wave. At incommensurate doping levels, the pinning energy is reduced, owing to the presence of real-space defects in the stripe order, and a pronounced increase in the oscillator strength is seen. The results provide compelling evidence for the existence of low-energy collective modes of the charge stripes. © 2008 The American Physical Society.Conformational changes of photoactive yellow protein monitored by terahertz spectroscopy
Chemical Physics Letters 455:4-6 (2008) 289-292