Simulation and optimisation of terahertz emission from InGaAs and InP photoconductive switches
Solid State Communications 136:11-12 (2005) 595-600
Abstract:
We simulate the terahertz emission from laterally biased InGaAs and InP using a three-dimensional carrier dynamics model in order to optimise the semiconductor material. Incident pump-pulse parameters of current Ti:Sapphire and Er:fibre lasers are chosen, and the simulation models the semiconductor's bandstructure using parabolic Γ, L and X valleys, and heavy holes. The emitted terahertz radiation is propagated within the semiconductor and into free space using a model based on the Drude-Lorentz dielectric function. As the InGaAs alloy approaches InAs an increase in the emitted power is observed, and this is attributed to a greater electron mobility. Additionally, low-temperature grown and ion-implanted InGaAs are modelled using a finite carrier trapping time. At sub-picosecond trapping times the terahertz bandwidth is found to increase significantly at the cost of a reduced emission power. © 2005 Elsevier Ltd. All rights reserved.Polarisation-sensitive terahertz detection by multicontact photoconductive receivers
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Three-dimensional carrier-dynamics simulation of terahertz emission from photoconductive switches
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Carrier dynamics in ion-implanted GaAs studied by simulation and observation of terahertz emission
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Simulation and optimisation of terahertz emission from InGaAs and InP photoconductive switches
(2005)