Relevance of dephasing processes for the ultrafast rise of emission from resonantly created excitons in quantum wells
Physica Status Solidi (B) Basic Research 204:1 (1997) 35-38
Abstract:
We present a comparative study of time-integrated four-wave-mixing and femtosecond emission under resonant, excitation on excitons in weakly disordered GaAs quantum wells. At highest exciton densities when dephasing dominates the spectral width (homogeneous broadening), we find that the rise time of the incoherent luminescence signal is given by T2/2. At lowest densities, optical coherence times approach the exciton radiative lifetime (15 to 20 ps). This confirms our previous result that coherent resonant Rayleigh scattering is responsible for the short rise time of the excitonic emission. We also show clear evidence for dephasing due to exciton-phonon interaction, as the rise time of the emission decreases dramatically when the sample temperature is increased.Resonant femtosecond emission from quantum well excitons: The role of rayleigh scattering and luminescence
Physical Review Letters 78:11 (1997) 2228-2231
Abstract:
We study the ultrafast properties of secondary radiation of semiconductor quantum wells under resonant excitation. We show that the exciton density dependence allows one to identify the origin of secondary radiation. At high exciton densities, the emission is due to incoherent luminescence with a rise time determined by exciton-exciton scattering. For low densities, when the distance between excitons is much larger than their diameter, the temporal shape is independent of density and rises quadratically, in excellent agreement with recent theories for resonant Rayleigh scattering. © 1997 The American Physical Society.Direct observation in the temporal domain of relaxation oscillations in a semiconductor laser
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 204:1 (1997) 574-576
Efficient intersubband scattering via carrier-carrier interaction
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 204:1 (1997) 159-161
Intersubband scattering rates in GaAs quantum wells under selective and resonant excitation, measured by femtosecond luminescence
SUPERLATTICES AND MICROSTRUCTURES 21:1 (1997) 77-83