Intersubband scattering rates in GaAs quantum wells under selective and resonant excitation, measured by femtosecond luminescence
SUPERLATTICES AND MICROSTRUCTURES 21:1 (1997) 77-83
Relaxation Oscillations in the Gain Recovery of Gain-Clamped Semiconductor Optical Amplifiers: Simulation and Experiments
Optica Publishing Group (1997) sd14
Resonant femtosecond emission from quantum well excitons: The role of Rayleigh scattering and luminescence
PHYSICAL REVIEW LETTERS 78:11 (1997) 2228-2231
Exciton recombination dynamics in ZnCdSe/ZnSe quantum wells
J CRYST GROWTH 159:1-4 (1996) 822-825
Abstract:
We present results of time-resolved luminescence experiments performed on Zn0.80Cd0.20Se/ZnSe quantum well laser structures as a function of carrier density and temperature. It is found that in narrow wells, where quantum confinement effects are strong, the luminescence is excitonic over all temperatures at densities up to and above threshold. For wide wells the luminescence is observed to cross over to a bimolecular decay profile at high temperature and density, which corresponds to the formation of a correlated electron-hole plasma.Time-resolved study of stimulated emission in ZnSe/Zn(S,Se) superlattices
J CRYST GROWTH 159:1-4 (1996) 657-660