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MicroPL optical setup

Professor Robert Taylor

Emeritus Professor of Condensed Matter Physics

Research theme

  • Photovoltaics and nanoscience

Sub department

  • Condensed Matter Physics

Research groups

  • Quantum Optoelectronics
Robert.Taylor@physics.ox.ac.uk
Telephone: 01865 (2)72230
Clarendon Laboratory, room 164
orcid.org/0000-0003-2578-9645
  • About
  • Teaching
  • Positions available
  • Publications

Lasing in perovskite nanocrystals

Image of transverse modes from lasing nanocrystals
Nano Research, 14, 108, 2021

Hot carrier relaxation by extreme electron-LO phonon scattering in GaN

PHYS STATUS SOLIDI B 216:1 (1999) 51-55

Authors:

S Hess, RA Taylor, ED O'Sullivan, JF Ryan, NJ Cain, V Roberts, JS Roberts

Abstract:

Hot carrier relaxation has been investigated in GaN using non-resonant femtosecond excitation where electrons are excited above and below the LO phonon energy. We observe remarkably rapid electron relaxation; the electron distribution is non-thermal, with a "cut-off" occurring near E-LO. In a preliminary Monte Carlo study we have simulations which reproduce the major experimental observations, confirming the development of a non-thermal electron distribution near E-LO due to the strong electron-LO phonon interaction. Hot phonon effects are pronounced at high carrier densities.
More details from the publisher

Stimulated emission and excitonic bleaching in GaN epilayers under high-density excitation

PHYS STATUS SOLIDI B 216:1 (1999) 465-470

Authors:

RA Taylor, S Hess, K Kyhm, J Smith, JF Ryan, GP Yablonskii, EV Lutsenko, VN Pavlovskii, M Heuken

Abstract:

Measurements of edge emission on a GaN epilayer under N-2 laser excitation demonstrate stimulated emission and gain. The mechanisms involved are investigated by using laser pulses of 250 fs duration to measure simultaneously the photoluminescence and the time-resolved reflectance near the band edge, over a range of excitation densities. The excitons are bleached at high densities due to free carriers. A broad luminescence band is seen, extending similar to 100 meV below the low-density emission peak. We show that the onset of the stimulated emission coincides with the bleaching of the excitons (the Mott transition).
More details from the publisher

Hot carrier relaxation by extreme electron-LO phonon scattering in GaN

Physica Status Solidi (B) Basic Research 216:1 (1999) 51-55

Authors:

S Hess, RA Taylor, ED O'Sullivan, JF Ryan, NJ Cain, V Roberts, JS Roberts

Abstract:

Hot carrier relaxation has been investigated in GaN using non-resonant femtosecond excitation where electrons are excited above and below the LO phonon energy. We observe remarkably rapid electron relaxation; the electron distribution is non-thermal, with a "cut-off" occurring near ELO. In a preliminary Monte Carlo study we have simulations which reproduce the major experimental observations, confirming the development of a non-thermal electron distribution near ELO due to the strong electron-LO phonon interaction. Hot phonon effects are pronounced at high carrier densities.
More details from the publisher

Dynamics of resonantly excited excitons in GaN

Physical Review B American Physical Society (APS) 58:24 (1998) R15973-R15976

Authors:

S Hess, F Walraet, RA Taylor, JF Ryan, B Beaumont, P Gibart
More details from the publisher

Optical gain in GaN epilayers

Applied Physics Letters 73:2 (1998) 199-201

Authors:

S Hess, RA Taylor, JF Ryan, B Beaumont, P Gibart

Abstract:

We present optical gain and loss spectra measured over a range of carrier densities at low temperature in hexagonal GaN epilayers. We have determined the optical loss directly to be ∼80 cm-1. Photoluminescence spectra show that stimulated emission in our samples arises from electron-hole plasma recombination. © 1998 American Institute of Physics.
More details from the publisher

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