Exciton dynamics and recombination in ZnSe/ZnSe0.82 S 0.18 superlattices
Semiconductor Science and Technology 9:5 S (1994) 762-764
Abstract:
We report time-resolved optical transmission and photoluminescence measurements of exciton dynamics and recombination in a ZnSe/ZnSe 0.82S0.18 superlattice which displays low-threshold lasing. The carrier densities in our experiments are below threshold for stimulated emission. We find clear evidence for strong exciton-LO phonon scattering which gives rise to emission at the same wavelength where stimulated emission is reported to occur.Time-resolved studies of hot carriers and excitons in MBE-grown ZnTe/GaSb epilayers
Semiconductor Science and Technology 9:5 S (1994) 759-761
Abstract:
We report time-resolved luminescence measurements of MBE-grown ZnTe/GaSb. Above-bandgap excitation is provided by second-harmonic generation using infrared pulses from a Ti:sapphire laser. Cooling of the hot-carrier distribution is observed on a picosecond time-scale, and is seen to be limited by phonon bottle-necking at these carrier densities, allowing an estimate of the LO phonon lifetime in this material.Excitonic processes and lasing in ZnSSe/ZnSe superlattices
Superlattices and Microstructures Elsevier BV 16:4 (1994) 371-377
EXCITON DYNAMICS AND RECOMBINATION IN ZNSE ZNSE0.82S0.18 SUPERLATTICES
SEMICOND SCI TECH 9:5 (1994) 762-764
TIME-RESOLVED STUDIES OF HOT CARRIERS AND EXCITONS IN MBE-GROWN ZNTE GASB EPILAYERS
SEMICOND SCI TECH 9:5 (1994) 759-761