Resonant femtosecond emission from quantum well excitons: The role of rayleigh scattering and luminescence
Physical Review Letters 78:11 (1997) 2228-2231
Abstract:
We study the ultrafast properties of secondary radiation of semiconductor quantum wells under resonant excitation. We show that the exciton density dependence allows one to identify the origin of secondary radiation. At high exciton densities, the emission is due to incoherent luminescence with a rise time determined by exciton-exciton scattering. For low densities, when the distance between excitons is much larger than their diameter, the temporal shape is independent of density and rises quadratically, in excellent agreement with recent theories for resonant Rayleigh scattering. © 1997 The American Physical Society.Direct observation in the temporal domain of relaxation oscillations in a semiconductor laser
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 204:1 (1997) 574-576
Efficient intersubband scattering via carrier-carrier interaction
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 204:1 (1997) 159-161
Intersubband scattering rates in GaAs quantum wells under selective and resonant excitation, measured by femtosecond luminescence
SUPERLATTICES AND MICROSTRUCTURES 21:1 (1997) 77-83
Relaxation Oscillations in the Gain Recovery of Gain-Clamped Semiconductor Optical Amplifiers: Simulation and Experiments
Optica Publishing Group (1997) sd14