Ultrafast optical absorption measurements of electron-phonon scattering in GaAs quantum wells
(1996) 23-26
Exciton dynamics in ZnSe/ZnSxSe1-x superlattices
NUOVO CIMENTO D 17:11-12 (1995) 1429-1433
Abstract:
Time-resolved photoluminescence experiments in a wide carrier density range up to and beyond the threshold for stimulated emission in ZnSe/ZnSxSe1-x. superlattices are presented. Different localisation mechanisms of free excitons are identified giving rise to different radiative recombination channels. At high carrier density localised energy states merge into miniband that allows for exciton-exciton interaction, such as screening of the free-exciton absorption and inelastic exciton-exciton scattering.Femtosecond optical absorption measurements of electron-phonon scattering in GaAs quantum wells
Applied Physics Letters (1995) 3188
Abstract:
We present a combined experimental and theoretical investigation of intra- and intersubband carrier relaxation in GaAs/AlAs quantum wells following femtosecond laser excitation at low density. Time-resolved optical absorption has been measured using 125 fs pulses from a tunable Ti:sapphire laser which allows carriers to be excited preferentially into different subbands. The experiments have been analyzed using a multi-subband Monte Carlo simulation which contains all the important scattering mechanisms. Electron-phonon scattering rates obtained from dielectric continuum theory have been used, and we find excellent agreement with the experiment. The dominance of interface phonons in intrasubband relaxation is confirmed. © 1995 American Institute of Physics.FEMTOSECOND OPTICAL-ABSORPTION MEASUREMENTS OF ELECTRON-PHONON SCATTERING GAAS QUANTUM-WELLS
APPLIED PHYSICS LETTERS 66:23 (1995) 3188-3190
Exciton dynamics and recombination in ZnSe/ZnSe0.82 S 0.18 superlattices
Semiconductor Science and Technology 9:5 S (1994) 762-764