TIME-RESOLVED AND CW OPTICAL STUDIES OF MBE-GROWN ZNTE/GASB EPILAYERS
J LUMIN 60-1 (1994) 788-791
TIME-RESOLVED PHOTOLUMINESCENCE STUDIES OF STIMULATED-EMISSION AND EXCITON DYNAMICS IN ZNSE/ZNS0.18SE0.82 SUPERLATTICES
SOLID STATE ELECTRON 37:4-6 (1994) 1133-1136
Picosecond photoluminescence intensity correlation measurements of hot carriers in GaAs/Alx Ga1-x As quantum wells
Journal of Luminescence 59:5 (1994) 303-313
Abstract:
We have measured the energy relaxation of hot carriers in doped and undoped GaAs/AlxGa1-xAs quantum wells by detecting time-resolved hot luminescence using a two-pulse intensity correlation technique. The results are compared with time-dependent intensity correlation functions calculated using a model of energy relaxation by optical phonon interactions which includes non-equilibrium phonon effects. The excellent agreement between calculated and experimental correlation functions shows the great potential of this method in measuring ultrafast relaxation processes. © 1994.Time-resolved and CW optical studies of MBE-grown ZnTe/GaSb epilayers
Journal of Luminescence 60-61:C (1994) 786-787
Abstract:
We report optical studies of MBE-grown ZnTe/GaSb. Main impurities and free exciton resonances are determined, and polariton-phonon scattering is observed. We also report time-resolved photoluminescence studies, yielding an estimate of the LO phonon lifetime in ZnTe. © 1994.Time-resolved and CW optical studies of MBE-grown ZnTe/GaSb epilayers
Journal of Luminescence 60-61:C (1994) 788-791