Carrier recombination in InAs/GaAs Quantum Dot and GaInNAs/GaAs Quantum Well LEDs emitting near 1300 nm.
MRS Advances Springer Nature 744 (2002) m6.3
Electro-absorption and electro-refraction in InGaAsN quantum well structures
Electronics Letters Institution of Engineering and Technology (IET) 38:7 (2002) 343
High-speed integrated optical wireless system demonstrator
Proceedings of SPIE SPIE, the international society for optics and photonics 4530 (2001) 145-153
Insight into planar microcavity emission as a function of numerical aperture
Optics Communications Elsevier 195:5-6 (2001) 327-338
Optical characterization of GaAs pyramid microstructures formed by molecular beam epitaxial regrowth on pre-patterned substrates
Journal of Applied Physics AIP Publishing 90:1 (2001) 475-480