A comparative study of spontaneous emission and carrier recombination processes in InGaAs quantum dots and GaInNAs quantum wells emitting near 1300 nm
Journal of Applied Physics AIP Publishing 92:10 (2002) 6215-6218
Mid-infrared (? ~ 2?6 ?m) measurements of the refractive indices of GaAs and AlAs
Semiconductor Science and Technology IOP Publishing 17:11 (2002) 1189
Evaluation of (In,Ga,As)P-Based Materials for Use in Fabry-Perot Modulator Applications at Low Temperatures.
Institute of Electrical and Electronics Engineers (IEEE) (2002) 256-256
The propagation of electromagnetic power through subwavelength slits in a metallic grating
Optics Communications Elsevier 206:4-6 (2002) 217-223
Electro-absorption and electro-refraction in InGaAsN quantum well structures
Electronics Letters Institution of Engineering and Technology (IET) 38:7 (2002) 343-344