1.3 µm Room Temperature Emission from InAs/GaAs Self-Assembled Quantum Dots
Japanese Journal of Applied Physics IOP Publishing 38:1S (1999) 528
Design of InGaAsP multiple quantum-well Fabry-Perot modulators for soliton control
Journal of Lightwave Technology Institute of Electrical and Electronics Engineers (IEEE) 17:8 (1999) 1408-1414
Quantum dot resonant cavity light emitting diode operating near 1300 nm
Electronics Letters Institution of Engineering and Technology (IET) 35:3 (1999) 242
A 25 period InAs/sub 0.54/P/sub 0.46//In/sub 0.89/Ga/sub 0.11/P MQW for 1.55 /spl mu/m modulation grown by solid source MBE
Conference Proceedings 1998 International Conference on Indium Phosphide and Related Materials (Cat No98CH36129) Institute of Electrical and Electronics Engineers (IEEE) (1998) 564-567
General rules for constructing valence band effective mass Hamiltonians with correct operator order for heterostructures with arbitrary orientations
Semiconductor Science and Technology IOP Publishing 13:1 (1998) 11