Electro-absorption and electro-refraction in InGaAsN quantum well structures
Electronics Letters Institution of Engineering and Technology (IET) 38:7 (2002) 343-344
Normal-Incidence $1.56-\mu {\bf m}$ MQW Asymmetric Fabry-Perot Modulator (AFPM) for Passive Picocells
Institute of Electrical and Electronics Engineers (IEEE) (2002) 49-52
Carrier recombination in InAs/GaAs Quantum Dot and GaInNAs/GaAs Quantum Well LEDs emitting near 1300 nm.
MRS Advances Springer Nature 744 (2002) m6.3
High-speed integrated optical wireless system demonstrator
Proceedings of SPIE--the International Society for Optical Engineering SPIE, the international society for optics and photonics 4530 (2001) 145-153
Insight into planar microcavity emission as a function of numerical aperture
Optics Communications Elsevier 195:5-6 (2001) 327-338