Optical microstructures formed by self-assembly during MBE re-growth of GaAs on pre-patterned substrates
Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series (2000) 55-56
Abstract:
The authors propose and demonstrate a novel method for the fabrication of GaAs semiconductor optical microstructures by self-organization during molecular beam epitaxial growth (MBE) on pre-patterned micron scale mesa structures. The structures formed during this process are pyramidal and the faces of the pyramid are the stable facets formed during the MBE re-growth process. Such a structure, coupled with a planar Bragg reflector, may provide a novel means of achieving 3-D confinement of optical modes. This paper also presents calculations of the optical modes, which can be supported within metal clad pyramidal structures and considers the significance of the results for the design and fabrication of microcavities.High-efficiency, low voltage resonant-cavity light-emittingdiodes operating around 650 nm
Electronics Letters Institution of Engineering and Technology (IET) 36:20 (2000) 1730-1731
Multiple quantum well asymmetric Fabry-Perot modulators for RF-over-fibre applications
Institute of Electrical and Electronics Engineers (IEEE) (2000) 66-69
Angular spectrum of visible resonant cavity light-emitting diodes
Journal of Applied Physics AIP Publishing 86:6 (1999) 3475-3477
1.3 µm Room Temperature Emission from InAs/GaAs Self-Assembled Quantum Dots
Japanese Journal of Applied Physics IOP Publishing 38:1S (1999) 528