Growth of InAs x P1− x /InP multi-quantum well structures by solid source molecular beam epitaxy
Journal of Applied Physics AIP Publishing 78:5 (1995) 3330-3334
Ultrafast recovery time in a strained InGaAs-AlAs p-i-n modulator
IEEE Photonics Technology Letters Institute of Electrical and Electronics Engineers (IEEE) 7:2 (1995) 173-175
Strain effects in InAsP/InP MQW modulators for 1.06 /spl mu/m operation
Institute of Electrical and Electronics Engineers (IEEE) (1995) 536-539
X-ray characterisation of InGaAs/AlAs multiple quantum well p–i–n structures
Materials Science and Technology SAGE Publications 11:1 (1995) 50-53
Room-temperature characterization of InGaAs/AlAs multiple quantum well p - i - n diodes
Applied Physics Letters AIP Publishing 65:26 (1994) 3323-3325