Infrared optical detectors operating in the 1.7- to 3-μm range based on Inx Ga1-x Sb for environmental gas-sensing
Conference on Lasers and Electro-Optics Europe - Technical Digest (1994) 335-336
Abstract:
Detectors operating in the 2-3 μm range based on InxGa1-xSb for environmental sensing are investigated. The same detectors which require a low leakage current reverse biased diode are studied for this p-n junction and Schottky barrier diode structures. The p-n hetero-junction between an n-GaAs substrate and the p-GaSb active region showed very good rectification. Despite the large lattice mismatch of -7.8%, there is less than 10 μA dark current up to 4V reverse bias. Increasing the barrier height to p-GaSb from 0.22eV to 0.7eV with use of a thin layer of GaAs have been quite successful but the result was not repeatable, unlike those for the GaSb/GaAs p-n junction.Effect of well/barrier ratio on the performanceofstrained InGaAs/GaAs quantum well modulators
Electronics Letters Institution of Engineering and Technology (IET) 30:24 (1994) 2067-2069
Use of a three-layer quantum-well structure to achieve an absorption edge blueshift
Applied Physics Letters AIP Publishing 64:10 (1994) 1251-1253
Growth and characterisation of InAsP/InP SQW and MQW PIN diode structures
1993 IEEE 5th International Conference on Indium Phosphide and Related Materials (1993) 167-170
Abstract:
We report the growth of InAsxP1-x/InP SQW and MQW PIN diodes by solid-source MBE (SSMBE) and describe their optical and electrical properties. The results show that these structures are of a comparable quality to that of other pseudomorphic systems such as In-GaAs/GaAs and cover the important wavelength range 1.0μm to 1.6μm.Varying strains in InAs/sub 1-x/P/sub x//InP multiple quantum well device structures
Institute of Electrical and Electronics Engineers (IEEE) (1993) 652-655