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Search for dark matter in events with a hadronically decaying vector boson and missing transverse momentum in $pp$ collisions at $\sqrt{s} = 13$ TeV with the ATLAS detector

ArXiv 1807.11471 (2018)
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Search for vector-boson resonances decaying to a top quark and bottom quark in the lepton plus jets final state in $pp$ collisions at $\sqrt{s}$ = 13 TeV with the ATLAS detector

ArXiv 1807.10473 (2018)
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In situ calibration of large-$R$ jet energy and mass in 13 TeV proton-proton collisions with the ATLAS detector

ArXiv 1807.09477 (2018)
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Charge collection in irradiated HV-CMOS detectors

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment Elsevier 924 (2018) 214-218

Authors:

B Hiti, A Affolder, Kirk Arndt, R Bates, M Benoit, F Di Bello, A Blue, Daniela Bortoletto, M Buckland, C Buttar, P Caragiulo, D Das, D Doering, J Dopke, A Dragone, F Ehrler, V Fadeyev, W Fedorko, Z Galloway, C Gay, H Grabas, IM Gregor, P Grenier, A Grillo, Y Han, M Hoeferkamp, LBA Hommels, T Huffman, JJ John, K Kanisauskas, C Kenney, G Kramberger, Z Liang, I Mandić, D Maneuski, F Martinez-Mckinney, Stephen McMahon, L Meng, M Mikuž, D Muenstermann, Richard Nickerson, I Peric, P Phillips, Richard Plackett, F Rubbo, L Ruckman, J Segal, S Seidel, A Seiden, Ian Shipsey

Abstract:

Active silicon detectors built on p-type substrate are a promising technological solution for large area silicontrackers such as those at the High Luminosity LHC, but the radiation hardness of this novel approach has tobe evaluated. Active n-in-p strip detector prototypes CHESS2 for ATLAS with different substrate resistivities inthe range of 20–1000Ωcmwere irradiated with neutrons and protons up to a fluence of2 × 1015neqcm−2and3.6 × 1015neqcm−2. Charge collection in passive test structures on the chip was evaluated using Edge-TCT andminimum ionising electrons from90Sr. Results were used to assess radiation hardness of the detector in the givenfluence range and to determine parameters of initial acceptor removal in different substrates.
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Charge collection in irradiated HV-CMOS detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment (2018)

Authors:

B Hiti, A Affolder, K Arndt, R Bates, M Benoit, FD Bello, A Blue, D Bortoletto, M Buckland, C Buttar, P Caragiulo, D Das, D Doering, J Dopke, A Dragone, F Ehrler, V Fadeyev, W Fedorko, Z Galloway, C Gay, H Grabas, IM Gregor, P Grenier, A Grillo, Y Han, M Hoeferkamp, LBA Hommels, T Huffman, J John, K Kanisauskas, C Kenney, G Kramberger, Z Liang, I Mandić, D Maneuski, F Martinez-Mckinney, S McMahon, L Meng, M Mikuž, D Muenstermann, R Nickerson, I Peric, P Phillips, R Plackett, F Rubbo, L Ruckman, J Segal, S Seidel, A Seiden, I Shipsey, W Song, M Stanitzki, D Su, C Tamma, R Turchetta, L Vigani, J Volk, R Wang, M Warren, F Wilson, S Worm, Q Xiu, J Zhang, H Zhu

Abstract:

© 2018 Elsevier B.V. Active silicon detectors built on p-type substrate are a promising technological solution for large area silicon trackers such as those at the High Luminosity LHC, but the radiation hardness of this novel approach has to be evaluated. Active n-in-p strip detector prototypes CHESS2 for ATLAS with different substrate resistivities in the range of 20–1000 Ωcm were irradiated with neutrons and protons up to a fluence of 2×10 15 n eq cm −2 and 3.6×10 15 n eq cm −2 . Charge collection in passive test structures on the chip was evaluated using Edge-TCT and minimum ionising electrons from 90 Sr. Results were used to assess radiation hardness of the detector in the given fluence range and to determine parameters of initial acceptor removal in different substrates.
More details from the publisher
Details from ORA
More details