Computational Condensed Matter Physics Group

Abstract:

The pressure-induced isostructural insulator-to-metal transition for SmS is characterized by the presence of an intermediate valence state at higher pressure which cannot be captured by density functional theory. As a direct outcome of including the charge and spin fluctuations incorporated in dynamical mean-field theory, we see the emergence of insulating and metallic phases with increasing pressure as a function of changing valence. This is accompanied by significantly improved predictions of the equilibrium lattice constants and bulk moduli for all Sm monochalcogenides verifying experiments. Nudged elastic band analysis reveals the insulating states to have a finite quasiparticle weight, decreasing as the gap closes rendering the transition to be not Mott-like, and classifies these materials as correlated band insulators. The difference between the discontinuous and continuous natures of these transitions can be attributed to the closeness of the sharply resonant Sm-4f peaks to the Fermi level in the predicted metallic states in SmS compared with SmSe and SmTe.

Abstract:

The dependence of ab initio many-body perturbation theory within the GW approximation on the eigensystem used in calculating quasiparticle corrections limits this method's predictive power. Here, we investigate the accuracy of the recently developed Wannier-localized optimally tuned screened range-separated hybrid (WOT-SRSH) functional as a generalized Kohn-Sham starting point for single-shot GW (G0W0) calculations for a range of semiconductors and insulators. Comparison to calculations based on well-established functionals, namely, PBE, PBE0, and HSE, as well as to self-consistent GW schemes and to experiment, shows that band gaps computed via G0W0@WOT-SRSH have a level of precision and accuracy that is comparable to that of more advanced methods such as quasiparticle self-consistent GW and eigenvalue self-consistent GW. We also find that G0W0@WOT-SRSH improves the description of states deeper in the valence band manifold. Finally, we show that G0W0@WOT-SRSH significantly reduces the sensitivity of computed band gaps to ambiguities in the underlying WOT-SRSH tuning procedure.

Abstract:

Halogen mixing in lead-halide perovskites is an effective route for tuning the band gap in light emission and multijunction solar cell applications. Here we report the effect of halogen mixing on the optoelectronic properties of lead-halide perovskites from theory and experiment. We applied the virtual crystal approximation within density functional theory, the <i>GW</i> approximation, and the Bethe-Salpeter equation to calculate structural, vibrational, and optoelectronic properties for a series of mixed halide perovskites. We separately perform spectroscopic measurements of these properties and analyze the impact of halogen mixing on quasiparticle band gaps, effective masses, absorption coefficients, charge-carrier mobilities, and exciton binding energies. Our joint theoretical-experimental study demonstrates that iodide-bromide mixed-halide perovskites can be modeled as homovalent alloys, and local structural distortions do not play a significant role for the properties of these mixed species. Our study outlines a general theoretical-experimental framework for future investigations of novel chemically mixed systems.

Abstract:

Using ultrafast optical-pump terahertz-probe spectroscopy (OPTP) and ultrafast terahertz emission spectroscopy, we showcase the electron and hole dynamics in Cd3As2 nanowires (NWs), a well-known 3D Dirac semimetal a subgroup of the newly discovered . A temperature-dependent photoconductivity measurement was carried out yielding an incredibly high electron mobility ~ 16,000 cm2/Vs at 5K. Strong THz emission due to helicity-dependent surface photocurrents was also observed for both nanowires and single crystal (SC) which is highly desirable for devices such as THz sources.