Ruddlesden-Popper defects act as a free surface: role in formation and photophysical properties of CsPbI3

(2025)

Authors:

Weilun Li, Qimu Yuan, Yinan Chen, Joshua RS Lilly, Marina R Filip, Laura M Herz, Michael B Johnston, Joanne Etheridge

Theory of ab initio downfolding with arbitrary range electron-phonon coupling

(2025)

Authors:

Norm M Tubman, Christopher JN Coveney, Chih-En Hsu, Andres Montoya-Castillo, Marina R Filip, Jeffrey B Neaton, Zhenglu Li, Vojtech Vlcek, Antonios M Alvertis

Phonon-mediated electron attraction in SrTiO$_3$ via the generalized Fröhlich and deformation potential mechanisms

(2025)

Authors:

Norm M Tubman, Christopher JN Coveney, Chih-En Hsu, Andres Montoya-Castillo, Marina R Filip, Jeffrey B Neaton, Zhenglu Li, Vojtech Vlcek, Antonios M Alvertis

Phonon screening of excitons in atomically thin semiconductors

Physical Review Letters American Physical Society 133:20 (2024) 206901

Authors:

Woncheol Lee, Antonios M Alvertis, Zhenglu Li, Steven G Louie, Marina R Filip, Jeffrey B Neaton, Emmanouil Kioupakis

Abstract:

Atomically thin semiconductors, encompassing both 2D materials and quantum wells, exhibit a pronounced enhancement of excitonic effects due to geometric confinement. Consequently, these materials have become foundational platforms for the exploration and utilization of excitons. Recent ab initio studies have demonstrated that phonons can substantially screen electron-hole interactions in bulk semiconductors and strongly modify the properties of excitons. While excitonic properties of atomically thin semiconductors have been the subject of extensive theoretical investigations, the role of phonon screening on excitons in atomically thin structures remains unexplored. In this Letter, we demonstrate via ab initio GW-Bethe-Salpeter equation calculations that phonon screening can have a significant impact on optical excitations in atomically thin semiconductors. We further show that the degree of phonon screening can be tuned by structural engineering. We focus on atomically thin GaN quantum wells embedded in AlN and identify specific phonons in the surrounding material, AlN, that dramatically alter the lowest-lying exciton in monolayer GaN via screening. Our studies provide new intuition beyond standard models into the interplay among structural properties, phonon characteristics, and exciton properties in atomically thin semiconductors, and have implications for future experiments.

Electronic structure and optical properties of halide double perovskites from a Wannier-localized optimally-tuned screened range-separated hybrid functional

Physical Review Materials American Physical Society 8:10 (2024) 105401

Authors:

Francisca Sagredo, Stephen E Gant, Guy Ohad, Jonah B Haber, Marina R Filip, Leeor Kronik, Jeffrey B Neaton

Abstract:

Halide double perovskites are a chemically diverse and growing class of compound semiconductors that are promising for optoelectronic applications. However, the prediction of their fundamental gaps and optical properties with density functional theory (DFT) and ab initio many-body perturbation theory has been a significant challenge. Recently, a nonempirical Wannier-localized optimally tuned screened range-separated hybrid (WOT-SRSH) functional has been shown to accurately produce the fundamental band gaps of a wide set of semiconductors and insulators, including lead halide perovskites. Here, we apply the WOT-SRSH functional to five halide double perovskites and compare the results with those obtained from other known functionals and previous GW calculations. We also use the approach as a starting point for GW calculations and we compute the band structures and optical absorption spectrum for Cs2AgBiBr6, using both time-dependent DFT and the GW-Bethe-Salpeter equation approach. We show that the WOT-SRSH functional leads to accurate fundamental and optical band gaps, as well as optical absorption spectra, consistent with spectroscopic measurements, thereby establishing WOT-SRSH as a viable method for the accurate prediction of optoelectronic properties of halide double perovskites.