Electronic structures and photoemission spectroscopy

Abstract:

Superconductivity in topological kagome metals has recently received great research interests. Here, charge density wave (CDW) orders and the evolution of superconductivity under various pressures in CsV₃ Sb₅ single crystal with V kagome lattice are investigated. By using high-resolution scanning tunneling microscopy/spectroscopy (STM/STS), two CDW orders in CsV₃ Sb₅ are observed which correspond to 4a × 1a and 2a × 2a superlattices. By applying pressure, the superconducting transition temperature T_c is significantly enhanced and reaches a maximum value of 8.2 K at around 1 GPa. Accordingly, CDW state is gradually declined as increasing the pressure, which indicates the competing interplay between CDW and superconducting state in this material. The broad superconducting transitions around 0.4-0.8 GPa can be related to the strong competition relation among two CDW states and superconductivity. These results demonstrate that CsV₃ Sb₅ is a new platform for exploring the interplay between superconductivity and CDW in topological kagome metals.

Abstract:

Quantum well states (QWSs) can form at the surface or interfaces of materials with confinement potential. They have broad applications in electronic and optical devices such as high mobility electron transistor, photodetector, and quantum well laser. The properties of the QWSs are usually the key factors for the performance of the devices. However, direct visualization and manipulation of such states are, in general, challenging. In this work, by using angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy/spectroscopy (STM/STS), we directly probe the QWSs generated on the vacuum interface of a narrow band gap semiconductor Nb₂SiTe₄. Interestingly, the position and splitting of QWSs could be easily manipulated via potassium (K) dosage onto the sample surface. Our results suggest Nb₂SiTe₄ to be an intriguing semiconductor system to study and engineer the QWSs, which has great potential in device applications.