Wafer‐scale epitaxial growth of the thickness‐controllable van der Waals ferromagnet CrTe2 for reliable magnetic memory applications

Advanced Functional Materials Wiley 33:50 (2023) 2304454

Authors:

Xinqi Liu, Puyang Huang, Yunyouyou Xia, Lei Gao, Liyang Liao, Baoshan Cui, Dirk Backes, Gerrit Laan, Thorsten Hesjedal, Yuchen Ji, Peng Chen, Yifan Zhang, Fan Wu, Meixiao Wang, Junwei Zhang, Guoqiang Yu, Cheng Song, Yulin Chen, Zhongkai Liu, Yumeng Yang, Yong Peng, Gang Li, Qi Yao, Xufeng Kou

Abstract:

To harness the intriguing properties of 2D van der Waals (vdW) ferromagnets (FMs) for versatile applications, the key challenge lies in the reliable material synthesis for scalable device production. Here, the epitaxial growth of single-crystalline 1T-CrTe2 thin films on 2-inch sapphire substrates are demonstrated. Benefiting from the uniform surface energy of the dangling bond-free Al2O3(0001) surface, the layer-by-layer vdW growth mode is observed right from the initial growth stage, which warrants precise control of the sample thickness beyond three monolayer and homogeneous surface morphology across the entire wafer. Moreover, the presence of the Coulomb interaction at the CrTe2/Al2O3 interface plays an important role in tailoring the anomalous Hall response, and the structural optimization of the CrTe2-based spin-orbit torque device leads to a substantial switching power reduction by 54%. The results may lay out a general framework for the design of energy-efficient spintronics based on configurable vdW FMs.

Measurement of the electronic structure of a type-II topological Dirac semimetal candidate VAl3 using angle-resolved photoelectron spectroscopy

Tungsten Springer Nature 5:3 (2023) 332-338

Authors:

Hong-Wei Fang, Ai-Ji Liang, Niels BM Schröter, Sheng-Tao Cui, Zhong-Kai Liu, Yu-Lin Chen

Orbital-selective charge-density wave in TaTe4

npj Quantum Materials Springer Nature 8:1 (2023) 44

Authors:

RZ Xu, X Du, JS Zhou, X Gu, QQ Zhang, YD Li, WX Zhao, FW Zheng, M Arita, K Shimada, TK Kim, C Cacho, YF Guo, ZK Liu, YL Chen, LX Yang

Twist-Induced Modification in the Electronic Structure of Bilayer WSe2.

Nano letters 23:15 (2023) 7008-7013

Authors:

Ding Pei, Zishu Zhou, Zhihai He, Liheng An, Han Gao, Hanbo Xiao, Cheng Chen, Shanmei He, Alexei Barinov, Jianpeng Liu, Hongming Weng, Ning Wang, Zhongkai Liu, Yulin Chen

Abstract:

The recent discovery of strongly correlated phases in twisted transition-metal dichalcogenides (TMDs) highlights the significant impact of twist-induced modifications on electronic structures. In this study, we employed angle-resolved photoemission spectroscopy with submicrometer spatial resolution (μ-ARPES) to investigate these modifications by comparing valence band structures of twisted (5.3°) and nontwisted (AB-stacked) bilayer regions within the same WSe2 device. Relative to the nontwisted region, the twisted area exhibits pronounced moiré bands and ∼90 meV renormalization at the Γ-valley, substantial momentum separation between different layers, and an absence of flat bands at the K-valley. We further simulated the effects of lattice relaxation, which can flatten the Γ-valley edge but not the K-valley edge. Our results provide a direct visualization of twist-induced modifications in the electronic structures of twisted TMDs and elucidate their valley-dependent responses to lattice relaxation.

Pressure-induced superconductivity in topological heterostructure (PbSe)5(Bi2Se3)6

Science China Materials Springer Nature 66:7 (2023) 2822-2828

Authors:

Cuiying Pei, Peng Zhu, Bingtan Li, Yi Zhao, Lingling Gao, Changhua Li, Shihao Zhu, Qinghua Zhang, Tianping Ying, Lin Gu, Bo Gao, Huiyang Gou, Yansun Yao, Jian Sun, Hanyu Liu, Yulin Chen, Zhiwei Wang, Yugui Yao, Yanpeng Qi