Substrate Doping Effect and Unusually Large Angle van Hove Singularity Evolution in Twisted Bi- and Multilayer Graphene.

Advanced materials (Deerfield Beach, Fla.) 29:27 (2017)

Authors:

Han Peng, Niels BM Schröter, Jianbo Yin, Huan Wang, Ting-Fung Chung, Haifeng Yang, Sandy Ekahana, Zhongkai Liu, Juan Jiang, Lexian Yang, Teng Zhang, Cheng Chen, Heng Ni, Alexey Barinov, Yong P Chen, Zhongfan Liu, Hailin Peng, Yulin Chen

Abstract:

Graphene has demonstrated great potential in new-generation electronic applications due to its unique electronic properties such as large carrier Fermi velocity, ultrahigh carrier mobility, and high material stability. Interestingly, the electronic structures can be further engineered in multilayer graphene by the introduction of a twist angle between different layers to create van Hove singularities (vHSs) at adjustable binding energy. In this work, using angle-resolved photoemission spectroscopy with sub-micrometer spatial resolution, the band structures and their evolution are systematically studied with twist angle in bilayer and trilayer graphene sheets. A doping effect is directly observed in graphene multilayer system as well as vHSs in bilayer graphene over a wide range of twist angles (from 5° to 31°) with wide tunable energy range over 2 eV. In addition, the formation of multiple vHSs (at different binding energies) is also observed in trilayer graphene. The large tuning range of vHS binding energy in twisted multilayer graphene provides a promising material base for optoelectrical applications with broadband wavelength selectivity from the infrared to the ultraviolet regime, as demonstrated by an example application of wavelength selective photodetector.

Large out-of-plane and linear in-plane magnetoresistance in layered hafnium pentatelluride

Physical Review B American Physical Society (APS) 95:15 (2017) 155128

Authors:

Nitesh Kumar, Chandra Shekhar, Meixiao Wang, Yulin Chen, Horst Borrmann, Claudia Felser

Dirac line nodes and effect of spin-orbit coupling in the nonsymmorphic critical semimetals MSiS(M=Hf,Zr)

Physical Review B American Physical Society (APS) 95:12 (2017) 125126

Authors:

C Chen, X Xu, J Jiang, S-C Wu, YP Qi, LX Yang, MX Wang, Y Sun, NBM Schröter, HF Yang, LM Schoop, YY Lv, J Zhou, YB Chen, SH Yao, MH Lu, YF Chen, C Felser, BH Yan, ZK Liu, YL Chen

Signature of type-II Weyl semimetal phase in MoTe2.

Nature communications 8 (2017) 13973

Authors:

J Jiang, ZK Liu, Y Sun, HF Yang, CR Rajamathi, YP Qi, LX Yang, C Chen, H Peng, C-C Hwang, SZ Sun, S-K Mo, I Vobornik, J Fujii, SSP Parkin, C Felser, BH Yan, YL Chen

Abstract:

Topological Weyl semimetal (TWS), a new state of quantum matter, has sparked enormous research interest recently. Possessing unique Weyl fermions in the bulk and Fermi arcs on the surface, TWSs offer a rare platform for realizing many exotic physical phenomena. TWSs can be classified into type-I that respect Lorentz symmetry and type-II that do not. Here, we directly visualize the electronic structure of MoTe2, a recently proposed type-II TWS. Using angle-resolved photoemission spectroscopy (ARPES), we unravel the unique surface Fermi arcs, in good agreement with our ab initio calculations that have nontrivial topological nature. Our work not only leads to new understandings of the unusual properties discovered in this family of compounds, but also allows for the further exploration of exotic properties and practical applications of type-II TWSs, as well as the interplay between superconductivity (MoTe2 was discovered to be superconducting recently) and their topological order.

Topological insulators: Engineered heterostructures

Nature Materials Nature Publishing Group 16:1 (2016) 3-4

Authors:

Thorsten Hesjedal, Y Chen

Abstract:

The combination of topological properties and magnetic order can lead to new quantum states and exotic physical phenomena. In particular, the coupling between topological insulators and antiferromagnets enables magnetic and electronic structural engineering.