Unveiling Electronic Correlation and the Ferromagnetic Superexchange Mechanism in the van der Waals Crystal CrSiTe_{3}.

Physical review letters 123:4 (2019) 047203

Authors:

Jiaxin Zhang, Xiaochan Cai, Wei Xia, Aiji Liang, Junwei Huang, Chengwei Wang, Lexian Yang, Hongtao Yuan, Yulin Chen, Shilei Zhang, Yanfeng Guo, Zhongkai Liu, Gang Li

Abstract:

The recent discovery of intrinsic ferromagnetic order in the atomically thin van der Waals crystal CrXTe_{3} (X=Si, Ge) stimulates intensive studies on the nature of low-dimensional magnetism because the presence of long-range magnetic order in two-dimensional systems with continuous symmetry is strictly prohibited by thermal fluctuations. By combining advanced many-body calculations with angle-resolved photoemission spectroscopy we investigate CrSiTe_{3} single crystals and unveil the pivotal role played by the strong electronic correlations at both high- and low-temperature regimes. Above the Curie temperature (T_{c}), Coulomb repulsion (U) drives the system into a charge transfer insulating phase. In contrast, below T_{c} the crystal field arranges the Cr-3d orbitals such that the ferromagnetic superexchange profits, giving rise to the bulk ferromagnetic ground state with which the electronic correlations compete. The excellent agreement between theory and experiment establishes CrSiTe_{3} as a prototype low-dimensional crystal with the cooperation and interplay of electronic correlation and ferromagnetism.

Strong spin-orbit coupling and Dirac nodal lines in the three-dimensional electronic structure of metallic rutile IrO2

Physical Review B American Physical Society (APS) 99:19 (2019) 195106

Authors:

X Xu, J Jiang, WJ Shi, Vicky Süß, C Shekhar, SC Sun, YJ Chen, S-K Mo, C Felser, BH Yan, HF Yang, ZK Liu, Y Sun, LX Yang, YL Chen

Progress of ARPES study on topological semimetals

Acta Physica Sinica Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences 68:22 (2019) 227102

Authors:

Tao Deng, Hai-Feng Yang, Jing Zhang, Yi-Wei Li, Le-Xian Yang, Zhong-Kai Liu, Yu-Lin Chen

Experimental observation of conductive edge states in weak topological insulator candidate HfTe5

APL Materials AIP Publishing 6:12 (2018) 121111

Authors:

S Liu, MX Wang, C Chen, X Xu, J Jiang, LX Yang, HF Yang, YY Lv, J Zhou, YB Chen, SH Yao, MH Lu, YF Chen, C Felser, BH Yan, ZK Liu, YL Chen

Systematic study of ferromagnetism in CrxSb2-xTe3 topological insulator thin films using electrical and optical techniques

Scientific Reports Springer Nature 8 (2018) 17024

Authors:

A Singh, V Kamboj, J Liu, J Llandro, Liam Duffy, SP Senanayak, HE Beere, A Ionescu, DA Ritchie, Thorsten Hesjedal, CHW Barnes

Abstract:

Ferromagnetic ordering in a topological insulator can break time-reversal symmetry, realizing dissipationless electronic states in the absence of a magnetic field. The control of the magnetic state is of great importance for future device applications. We provide a detailed systematic study of the magnetic state in highly doped CrxSb2−xTe3 thin films using electrical transport, magneto-optic Kerr effect measurements and terahertz time domain spectroscopy, and also report an efficient electric gating of ferromagnetic order using the electrolyte ionic liquid [DEME][TFSI]. Upon increasing the Cr concentration from x = 0.15 to 0.76, the Curie temperature (Tc) was observed to increase by ~5 times to 176 K. In addition, it was possible to modify the magnetic moment by up to 50% with a gate bias variation of just ±3 V, which corresponds to an increase in carrier density by 50%. Further analysis on a sample with x = 0.76 exhibits a clear insulator-metal transition at Tc, indicating the consistency between the electrical and optical measurements. The direct correlation obtained between the carrier density and ferromagnetism - in both electrostatic and chemical doping - using optical and electrical means strongly suggests a carrier-mediated Ruderman-Kittel-Kasuya-Yoshida (RKKY) coupling scenario. Our low-voltage means of manipulating ferromagnetism, and consistency in optical and electrical measurements provides a way to realize exotic quantum states for spintronic and low energy magneto-electronic device applications.