Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi2O2Se

Science Advances American Association for the Advancement of Science 4:9 (2018) eaat8355

Authors:

Cheng Chen, M Wang, J Wu, H Fu, H Yang, Z Tian, T Tu, Han Peng, Y Sun, X Xu, J Jiang, Niels Schröter, Yiwei Li, Ding Pei, S Liu, Sandy Ekahana, H Yuan, J Xue, G Li, J Jia, Z Liu, B Yan, H Peng, Yulin Chen

Abstract:

Semiconductors are essential materials that affect our everyday life in the modern world. Two-dimensional semiconductors with high mobility and moderate bandgap are particularly attractive today because of their potential application in fast, low-power, and ultrasmall/thin electronic devices. We investigate the electronic structures of a new layered air-stable oxide semiconductor, Bi2O2Se, with ultrahigh mobility (~2.8 × 105 cm2/V⋅s at 2.0 K) and moderate bandgap (~0.8 eV). Combining angle-resolved photoemission spectroscopy and scanning tunneling microscopy, we mapped out the complete band structures of Bi2O2Se with key parameters (for example, effective mass, Fermi velocity, and bandgap). The unusual spatial uniformity of the bandgap without undesired in-gap states on the sample surface with up to ~50% defects makes Bi2O2Se an ideal semiconductor for future electronic applications. In addition, the structural compatibility between Bi2O2Se and interesting perovskite oxides (for example, cuprate high–transition temperature superconductors and commonly used substrate material SrTiO3) further makes heterostructures between Bi2O2Se and these oxides possible platforms for realizing novel physical phenomena, such as topological superconductivity, Josephson junction field-effect transistor, new superconducting optoelectronics, and novel lasers.

Visualizing electronic structures of quantum materials by angle-resolved photoemission spectroscopy

Nature Reviews Materials Springer Nature 3:9 (2018) 341-353

Authors:

Haifeng Yang, Aiji Liang, Cheng Chen, Chaofan Zhang, Niels BM Schroeter, Yulin Chen

Ultrafast and highly sensitive infrared photodetectors based on two-dimensional oxyselenide crystals

Nature Communications Springer Nature 9:1 (2018) 3311

Authors:

Jianbo Yin, Zhenjun Tan, Hao Hong, Jinxiong Wu, Hongtao Yuan, Yujing Liu, Cheng Chen, Congwei Tan, Fengrui Yao, Tianran Li, Yulin Chen, Zhongfan Liu, Kaihui Liu, Hailin Peng

Folded superstructure and degeneracy-enhanced band gap in the weak-coupling charge density wave system 2H−TaSe2

Physical Review B American Physical Society 97 (2018)

Authors:

Yiwei Li, J Jiang, HF Yang, Dharmalingam Prabhakaran, ZK Liu, LX Yang, Yulin Chen

Abstract:

Using high-resolution angle-resolved photoemission spectroscopy (ARPES), we have mapped out the reconstructed electronic structure in the commensurate charge-density-wave (CDW) state of quasi-two-dimensional transition metal dichalcogenide 2H-TaSe2. The observation of the fine structure near Brillouin zone (BZ) center supplements the picture of Fermi surface folding in the 3×3 CDW state. In addition to the anisotropic CDW band gaps that energetically stabilize the system at the Fermi level in the first-order lock-in transition, we found band reconstruction at high binding energy, which can be well explained by the hybridization between main bands (MBs) and folded bands (FBs). Furthermore, in contrast to the perfectly nested quasi-one-dimensional system, triple-nesting-vector-induced CDW FBs increase the degeneracy of the band crossing and thus further enlarge the magnitude of band gap at certain momentum-energy positions. The visualization and modeling of CDW gaps in momentum-energy space reconciles the long-lasting controversy on the gap magnitude and suggests a weak-coupling Peierls physics in this system.

Single crystalline electronic structure and growth mechanism of aligned square graphene sheets

APL Materials AIP Publishing 6:3 (2018) 036107

Authors:

HF Yang, C Chen, H Wang, ZK Liu, T Zhang, H Peng, NBM Schröter, SA Ekahana, J Jiang, LX Yang, V Kandyba, A Barinov, CY Chen, J Avila, MC Asensio, HL Peng, ZF Liu, YL Chen