Photoemission study of the electronic structure of valence band convergent SnSe
Physical Review B American Physical Society (APS) 96:16 (2017) 165118
ARPES study of the epitaxially grown topological crystalline insulator SnTe(111)
Journal of Electron Spectroscopy and Related Phenomena Elsevier 219 (2017) 35-40
Spectroscopic evidence for the gapless electronic structure in bulk ZrTe5
Journal of Electron Spectroscopy and Related Phenomena Elsevier 219 (2017) 45-52
Observation of nodal line in non-symmorphic topological semimetal InBi
New Journal of Physics IOP Publishing 19:065007 (2017) 1-8
Abstract:
Topological nodal semimetal (TNS), characterized by its touching conduction and valence bands, is a newly discovered state of quantum matter which exhibits various exotic physical phenomena. Recently, a new type of TNS called topological nodal line semimetal (TNLS) is predicted where its conduction and valence band form a degenerate one-dimension line which is further protected by its crystal symmetry. In this work, we systematically investigated the bulk and surface electronic structure of the non-symmorphic, TNLS in InBi (which is also a type II Dirac semimetal) with strong spin-orbit coupling by using angle resolved photoemission spectroscopy. By tracking the crossing points of the bulk bands at the Brillouin zone boundary, we discovered the nodal-line feature along the kz direction, in agreement with the ab initio calculations and confirmed it to be a new compound in the TNLS family. Our discovery provides a new material platform for the study of these exotic topological quantum phases and paves the way for possible future applications.Emergence of Dirac-like bands in the monolayer limit of epitaxial Ge films on Au(1 1 1)
2D Materials Institute of Physics 4:3 (2017) 031005