Quantum Optoelectronics

Abstract:

Low temperature photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy of high purity ErSc(2)N@C(80) and Er(2)ScN@C(80) fullerenes reveal at least two metastable configurations of the Er(3+) ion within the cage, consistent with previous observations from x-ray diffraction. Using PLE measurements at a number of different emission wavelengths we have characterized the ground state, (4)I(152), and the first excited state, (4)I(132), of the various Er(3+) configurations and their crystal-field splitting. We present detailed energy level diagrams for the ground and excited states of the two dominant configurations of ErSc(2)N@C(80) and Er(2)ScN@C(80).

Abstract:

We report direct evidence for the control of the oscillator strength of the exciton state in a single quantum dot by the application of a vertical electric field. This is achieved through the study of the radiative lifetime of a single InGaN-GaN quantum dot in a p-i-n diode structure. Our results are in good quantitative agreement with theoretical predictions from an atomistic tight-binding model. Furthermore, the increase of the overlap between the electron and hole wave functions due to the applied field is shown experimentally to increase the attractive Coulomb interaction leading to a change in the sign of the biexcitonic binding energy. © 2007 The American Physical Society.

Abstract:

We report direct evidence for the control of the oscillator strength of the exciton state in a single quantum dot by the application of a vertical electric field. This is achieved through the study of the radiative lifetime of a single InGaN-GaN quantum dot in a p-i-n diode structure. Our results are in good quantitative agreement with theoretical predictions from an atomistic tight-binding model. Furthermore, the increase of the overlap between the electron and hole wave functions due to the applied field is shown experimentally to increase the attractive Coulomb interaction leading to a change in the sign of the biexcitonic binding energy.

Abstract:

The authors report on the generation of single photons in the blue spectral region from a single InGaNGaN quantum dot. The collection efficiency was enhanced by embedding the quantum dot layer in the middle of a low- Q microcavity. The microphotoluminescence is observed to be approximately ten times stronger than typical InGaN quantum dot emission without a cavity. The measurements were performed using nonlinear excitation spectroscopy in order to suppress the background emission from the underlying wetting layer. © 2007 American Institute of Physics.