Quantum Optoelectronics

Abstract:

We report direct evidence for the control of the oscillator strength of the exciton state in a single quantum dot by the application of a vertical electric field. This is achieved through the study of the radiative lifetime of a single InGaN-GaN quantum dot in a p-i-n diode structure. Our results are in good quantitative agreement with theoretical predictions from an atomistic tight-binding model. Furthermore, the increase of the overlap between the electron and hole wave functions due to the applied field is shown experimentally to increase the attractive Coulomb interaction leading to a change in the sign of the biexcitonic binding energy. © 2007 The American Physical Society.

Abstract:

We report direct evidence for the control of the oscillator strength of the exciton state in a single quantum dot by the application of a vertical electric field. This is achieved through the study of the radiative lifetime of a single InGaN-GaN quantum dot in a p-i-n diode structure. Our results are in good quantitative agreement with theoretical predictions from an atomistic tight-binding model. Furthermore, the increase of the overlap between the electron and hole wave functions due to the applied field is shown experimentally to increase the attractive Coulomb interaction leading to a change in the sign of the biexcitonic binding energy.

Abstract:

The authors report on the generation of single photons in the blue spectral region from a single InGaNGaN quantum dot. The collection efficiency was enhanced by embedding the quantum dot layer in the middle of a low- Q microcavity. The microphotoluminescence is observed to be approximately ten times stronger than typical InGaN quantum dot emission without a cavity. The measurements were performed using nonlinear excitation spectroscopy in order to suppress the background emission from the underlying wetting layer. © 2007 American Institute of Physics.

Abstract:

We report a detailed study of the magnetophotoluminescence of single-wall carbon nanotubes at various temperatures in fields up to 58 T. We give direct experimental evidence of the diameter dependence of the Aharanov-Bohm phase-induced band gap shifts. Large increases in intensity are produced by the magnetic field at low temperatures which are also significantly chiral index [(n,m)] dependent. These increases are attributed to the magnetic field induced mixing of the wave functions of the exciton states. A study of the emission from nanotubes aligned perpendicular to the applied magnetic field shows even larger field-induced photoluminescence intensity enhancements and unexpectedly large redshifts in band gap energies, not predicted theoretically. © 2007 The American Physical Society.