Relaxation Oscillations in the Gain Recovery of Gain-Clamped Semiconductor Optical Amplifiers: Simulation and Experiments

Optics InfoBase Conference Papers (1997) 260-265

Authors:

JL Pleumeekers, T Hessler, S Haacke, MA Dupertuis, PE Selbmann, B Deveaud, RA Taylor, T Ducellier, P Doussière, M Bachmann, JY Emery

Abstract:

This paper shows experimental data and simulation results of the gain recovery of gain-clamped semiconductor optical amplifiers (GC-SOA). Damped relaxation oscillations are observed. Both the oscillation frequency and damping rate increase with applied current and can attain very high values. We measured a gain recovery time of 26 ps at 200 mA applied current and an oscillation frequency of 11 GHz. A good agreement between experimental data and simulation results is obtained. Simulation results indicate that a GC-SOA used as amplifier in wavelength division multiplexing (WDM) networks can amplify signals at very high bit-rates with low cross-talk and extinction ratio compression.

Relevance of dephasing processes for the ultrafast rise of emission from resonantly created excitons in quantum wells

Physica Status Solidi (B) Basic Research 204:1 (1997) 35-38

Authors:

S Haacke, G Hayes, RA Taylor, B Deveaud, R Zimmermann, I Bar-Joseph

Abstract:

We present a comparative study of time-integrated four-wave-mixing and femtosecond emission under resonant, excitation on excitons in weakly disordered GaAs quantum wells. At highest exciton densities when dephasing dominates the spectral width (homogeneous broadening), we find that the rise time of the incoherent luminescence signal is given by T2/2. At lowest densities, optical coherence times approach the exciton radiative lifetime (15 to 20 ps). This confirms our previous result that coherent resonant Rayleigh scattering is responsible for the short rise time of the excitonic emission. We also show clear evidence for dephasing due to exciton-phonon interaction, as the rise time of the emission decreases dramatically when the sample temperature is increased.

Resonant femtosecond emission from quantum well excitons: The role of rayleigh scattering and luminescence

Physical Review Letters 78:11 (1997) 2228-2231

Authors:

S Haacke, RA Taylor, R Zimmermann, I Bar-Joseph, B Deveaud

Abstract:

We study the ultrafast properties of secondary radiation of semiconductor quantum wells under resonant excitation. We show that the exciton density dependence allows one to identify the origin of secondary radiation. At high exciton densities, the emission is due to incoherent luminescence with a rise time determined by exciton-exciton scattering. For low densities, when the distance between excitons is much larger than their diameter, the temporal shape is independent of density and rises quadratically, in excellent agreement with recent theories for resonant Rayleigh scattering. © 1997 The American Physical Society.

Direct observation in the temporal domain of relaxation oscillations in a semiconductor laser

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 204:1 (1997) 574-576

Authors:

T Hessler, S Haacke, JL Pleumeekers, PE Selbmann, MA Dupertuis, B Deveaud, P Doussiere, M Bachmann, JY Emery, T Ducellier, RA Taylor

Efficient intersubband scattering via carrier-carrier interaction

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 204:1 (1997) 159-161

Authors:

M Hartig, S Haacke, PE Selbmann, B Deveaud, RA Taylor, L Rota