Quantum Optoelectronics

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Modeling the nonlinear photoluminescence intensity dependence observed in asymmetric GaN quantum discs with AlGaN barriers

2005 5th IEEE Conference on Nanotechnology 1 (2005) 393-396

Authors:

KH Lee, S Birner, JH Na, RA Taylor, JW Robinson, JH Rice, YS Park, CM Park, TW Kang

Abstract:

By means of a 3D self-consistent numerical simulation we have calculated the wavefunctions and energies of the states in an asymmetric GaN quantum disc (Q-disc) system. Overall, good agreement between the modeling and experimental results were observed. Furthermore, modeling has provided an insight into the carrier dynamics of the Q-disc system. In particular, results from the modeling supports the view that the nonlinear relationship between PL intensity and excitation power was due to electron tunneling between the asymmetric GaN Q-discs. ©2005 IEEE.
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Registration of single quantum dots for solid state cavity quantum electrodynamics

Conference Proceedings Lasers and Electro Optics Society Annual Meeting LEOS 2005 (2005) 130-131

Authors:

KH Lee, AM Green, FSF Brossard, RA Taylor, AJ Turberfield, DA Williams, GAD Briggs

Abstract:

We discuss a novel technique to register the spatial and spectral characteristics of a single quantum dot using two photon absorption laser lithography. This would be useful in realizing solid state cavity quantum electrodynamics. © 2005 British Crown Copyright.
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Biexciton and exciton dynamics in single InGaN quantum dots

NANOTECHNOLOGY 16:9 (2005) 1477-1481

Authors:

JH Rice, JW Robinson, JH Na, KH Lee, RA Taylor, DP Williams, EP O'Reilly, AD Andreev, Y Arakawa, S Yasin
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Luminescence properties of isolated InGaN/GaN quantum dots

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 202:3 (2005) 372-376

Authors:

RW Martin, PR Edwards, RA Taylor, JH Rice, JH Na, JW Robinson, JD Smith, C Liu, IM Watson
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Quantum dot emission from selectively-grown InGaN/GaN micropyramid arrays

AIP CONF PROC 772 (2005) 865-866

Authors:

RA Taylor, JH Rice, JH Na, JW Robinson, RW Martin, PR Edwards, IM Watson, C Liu

Abstract:

InxGa1-xN quantum dots have been fabricated by the selective growth of GaN micropyramid arrays topped with InGaN/GaN quantum wells. The spatially-, spectrally-, and time-resolved emission properties of these structures were measured using cathodoluminescence hyper-spectral imaging and low-temperature microphotoluminescence spectroscopy. The presence of InGaN quantum dots was confirmed directly by the observation of sharp peaks in the emission spectrum at the pyramid apices. These luminescence peaks exhibit decay lifetimes of approximately 0.5 ns, with linewidths down to 650 mu eV (limited by the spectrometer resolution).
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