Time-resolved gain saturation dynamics in InGaN multi-quantum well structures
PHYS STATUS SOLIDI C (2004) 2508-2511
Time-resolved dynamics in single InGaN quantum dots
Applied Physics Letters 83:13 (2003) 2674-2676
Abstract:
A study was performed on the time-resolved dynamics in single InGaN quantum dots. The recombination was shown to be characterized by a single exponential decay. The results showed that the lifetimes of single dots in the temperature range 4 to 60 K decrease with increasing temperature.Time-resolved Dynamics in Single InGaN Quantum Dots
Applied Physics Letters 83 (2003) 2674-2676
InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal
Applied Physics Letters 83:4 (2003) 755-757
Abstract:
InGaN quantum dots grown by metalorganic vapor phase epitaxy were investigated. The InGaN epilayer was annealed at the growth temperature in molecular nitrogen. Microphotoluminescence studies of the quantum dots revealed sharp peaks with typical linewidths of ∼700 μeV. Time-resolved photoluminescence studies were also used for analysis.Nanoscale solid-state quantum computing.
Philos Trans A Math Phys Eng Sci 361:1808 (2003) 1473-1485