Time-resolved exciton dynamics and stimulated emission from ZnCdSe/ZnSe multiple quantum well structures

Solid-State Electronics 40:1-8 (1996) 741-743

Authors:

RA Taylor, RA Adams, JF Ryan, RM Park

Abstract:

Time-resolved luminescence has been used to investigate the dynamics of excitonic recombination and stimulated emission in ZnCdSe/ZnSe multiple quantum wells where the exciton binding energy is close to the optical phonon energy. At low excitation densities strong excitonic recombination is observed with simple exponential decay kinetics. At densities near threshold, however, bilinear recombination kinetics are found with a large rate constant (R = 1.8 × 10-3 S-1 cm2), and a dramatic reduction in the lifetime is observed. Stimulated emission occurs at an energy ∼ 18 meV below the exciton absorption peak, and shifts to lower energy with increasing excitation density up to three times the threshold density. These observations are consistent with recombination in a dense exciton system, which gives way at high density to a correlated electron-hole plasma.

Time-resolved study of stimulated emission in ZnSe/Zn(S,Se) superlattices

Journal of Crystal Growth 159:1-4 (1996) 657-660

Authors:

M Dabbicco, CJ Stevens, RA Adams, RA Taylor, JF Ryan, R Cingolani, I Suemune

Abstract:

The time evolution of the stimulated emission in ZnSe/Zn(S,Se) superlattices has been studied by picosecond photoluminescence spectroscopy. The threshold of the stimulated emission is characterised by a sharp decrease of the transition lifetime from 150 ps to less than 30 ps at a carrier density of about 1012 cm-2. While the experimental results are consistent with a stimulated emission process due to excitons, they show no evidence of electron-hole plasma recombination.

Ultrafast electric field induced nonlinear response in ZnSe/ZnSeS superlattices

Journal of Crystal Growth 159:1-4 (1996) 835-838

Authors:

CJ Stevens, M Dabbicco, RA Taylor, JF Ryan

Abstract:

We report the observation of an ultrafast optical nonlinearity in ZnSe/ZnSeS superlattices which arises from the generation of an internal field due to charge separation caused by preferential hole trapping. The absorption recovery is extremely fast, ∼ 650 fs, being due to the subsequent localisation of electrons.

Time-resolved exciton dynamics and stimulated emission from ZnCdSe/ZnSe multiple quantum well structures

SOLID STATE ELECTRON 40:1-8 (1996) 741-743

Authors:

RA Taylor, RA Adams, JF Ryan, RM Park

Abstract:

Time-resolved luminescence has been used to investigate the dynamics of excitonic recombination and stimulated emission in ZnCdSe/ZnSe multiple quantum wells where the exciton binding energy is close to the optical phonon energy. At low excitation densities strong excitonic recombination is observed with simple exponential decay kinetics. At densities near threshold, however, bilinear recombination kinetics are found with a large rate constant (R = 1.8 x 10(-3) s(-1) cm(2)), and a dramatic reduction in the lifetime is observed. Stimulated emission occurs at an energy similar to 18 meV below the exciton absorption peak, and shifts to lower energy with increasing excitation density up to three times the threshold density. These observations are consistent with recombination in a dense exciton system, which gives way at high density to a correlated electron-hole plasma.

Ultrafast optical absorption measurements of electron-phonon scattering in GaAs quantum wells

(1996) 23-26

Authors:

K Turner, L Rota, RA Taylor, JF Ryan