Quantum Optoelectronics

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Time-resolved Dynamics in Single InGaN Quantum Dots

Applied Physics Letters 83 (2003) 2674-2676

Authors:

RA Taylor, J.W. Robinson, James H. Rice, A. Jarjour
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InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal

Applied Physics Letters 83:4 (2003) 755-757

Authors:

RA Oliver, GAD Briggs, MJ Kappers, CJ Humphreys, S Yasin, JH Rice, JD Smith, RA Taylor

Abstract:

InGaN quantum dots grown by metalorganic vapor phase epitaxy were investigated. The InGaN epilayer was annealed at the growth temperature in molecular nitrogen. Microphotoluminescence studies of the quantum dots revealed sharp peaks with typical linewidths of ∼700 μeV. Time-resolved photoluminescence studies were also used for analysis.
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Nanoscale solid-state quantum computing.

Philos Trans A Math Phys Eng Sci 361:1808 (2003) 1473-1485

Authors:

A Ardavan, M Austwick, SC Benjamin, GAD Briggs, TJS Dennis, A Ferguson, DG Hasko, M Kanai, AN Khlobystov, BW Lovett, GW Morley, RA Oliver, DG Pettifor, K Porfyrakis, JH Reina, JH Rice, JD Smith, RA Taylor, DA Williams, C Adelmann, H Mariette, RJ Hamers

Abstract:

Most experts agree that it is too early to say how quantum computers will eventually be built, and several nanoscale solid-state schemes are being implemented in a range of materials. Nanofabricated quantum dots can be made in designer configurations, with established technology for controlling interactions and for reading out results. Epitaxial quantum dots can be grown in vertical arrays in semiconductors, and ultrafast optical techniques are available for controlling and measuring their excitations. Single-walled carbon nanotubes can be used for molecular self-assembly of endohedral fullerenes, which can embody quantum information in the electron spin. The challenges of individual addressing in such tiny structures could rapidly become intractable with increasing numbers of qubits, but these schemes are amenable to global addressing methods for computation.
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Nanoscale solid-state quantum computing

Philosophical Transactions of the Royal Society A Mathematical Physical and Engineering Sciences 361:1808 (2003) 1473-1485

Authors:

A Ardavan, M Austwick, SC Benjamin, GAD Briggs, TJS Dennis, A Ferguson, DG Hasko, M Kanai, AN Khlobystov, BW Lovett, GW Morley, RA Oliver, DG Pettifor, K Porfyrakis, JH Reina, JH Rlce, JD Smith, RA Taylor, DA Williams, C Adelmann, H Mariette, RJ Hamers

Abstract:

Most experts agree that it is too early to say how quantum computers will eventually be built, and several nanoscale solid-state schemes are being implemented in a range of materials. Nanofabricated quantum dots can be made in designer configurations, with established technology for controlling interactions and for reading out results. Epitaxial quantum dots can be grown in vertical arrays in semiconductors, and ultrafast optical techniques are available for controlling and measuring their excitations. Single-walled carbon nanotubes can be used for molecular self-assembly of endohedral fullerenes, which can embody quantum information in the electron spin. The challenges of individual addressing in such tiny structures could rapidly become intractable with increasing numbers of qubits, but these schemes are amenable to global addressing methods for computation.
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Time-resolved gain dynamics in InGaN MQWs using a Kerr gate

Physica E: Low-Dimensional Systems and Nanostructures 17:1-4 (2003) 255-257

Authors:

RA Taylor, JD Smith, JH Rice, JF Ryan, T Someya, Y Arakawa

Abstract:

The Kerr gate technique is used to time-resolve the gain in an In0.02Ga0.98N/In0.16Ga0.84N multiple quantum well sample. A new way of analyzing the data in such a variable stripe length method gain experiment is used to analyze the time-resolved spectra. The dynamics of the emission and gain are discussed. These measurements suggest that the photoexcited carriers must localize (possibly at indium-rich sites) before strong stimulated emission is seen. © 2002 Elsevier Science B.V. All rights reserved.
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