Quantum Optoelectronics

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Resonant femtosecond emission from quantum well excitons: The role of Rayleigh scattering and luminescence

PHYSICAL REVIEW LETTERS 78:11 (1997) 2228-2231

Authors:

S Haacke, RA Taylor, R Zimmermann, I BarJoseph, B Deveaud
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Exciton recombination dynamics in ZnCdSe/ZnSe quantum wells

J CRYST GROWTH 159:1-4 (1996) 822-825

Authors:

RA Taylor, RA Adams, JF Ryan, RM Park

Abstract:

We present results of time-resolved luminescence experiments performed on Zn0.80Cd0.20Se/ZnSe quantum well laser structures as a function of carrier density and temperature. It is found that in narrow wells, where quantum confinement effects are strong, the luminescence is excitonic over all temperatures at densities up to and above threshold. For wide wells the luminescence is observed to cross over to a bimolecular decay profile at high temperature and density, which corresponds to the formation of a correlated electron-hole plasma.
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Time-resolved study of stimulated emission in ZnSe/Zn(S,Se) superlattices

J CRYST GROWTH 159:1-4 (1996) 657-660

Authors:

M Dabbicco, CJ Stevens, RA Adams, RA Taylor, JF Ryan, R Cingolani, I Suemune

Abstract:

The time evolution of the stimulated emission in ZnSe/Zn(S,Se) superlattices has been studied by picosecond photoluminescence spectroscopy. ?The threshold of the stimulated emission is characterised by a sharp decrease of the transition lifetime from 150 ps to less than 30 ps at a carrier density of about 10(12) cm(-2). While the experimental results are consistent with a stimulated emission process due to excitons, they show no evidence of electron-hole plasma recombination.
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Ultrafast electric field induced nonlinear response in ZnSe/ZnSeS superlattices

J CRYST GROWTH 159:1-4 (1996) 835-838

Authors:

CJ Stevens, M Dabbicco, RA Taylor, JF Ryan

Abstract:

We report the observation of an ultrafast optical nonlinearity in ZnSe/ZnSeS superlattices which arises from the generation of an internal field due to charge separation caused by preferential hole trapping. The absorption recovery is extremely fast, similar to 650 fs, being due to the subsequent localisation of electrons.
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Exciton recombination dynamics in ZnCdSe/ZnsSe quantum wells

Journal of Crystal Growth 159:1-4 (1996) 822-825

Authors:

RA Taylor, RA Adams, JF Ryan, RM Park

Abstract:

We present results of time-resolved luminescence experiments performed on Zn0.80Cd0.20Se/ZnSe quantum well laser structures as a function of carrier density and temperature. It is found that in narrow wells, where quantum confinement effects are strong, the luminescence is excitonic over all temperatures at densities up to and above threshold. For wide wells the luminescence is observed to cross over to a bimolecular decay profile at high temperature and density, which corresponds to the formation of a correlated electron-hole plasma.
More details from the publisher