Quantum Optoelectronics

Abstract:

We present studies of the optical transitions in InGaN quantum dots (QDs). Spatially-resolved microphotoluminescence (μ-PL) of single InGaN QDs reveals very sharp, clearly-defined peaks that are characteristic of strongly-confined carriers. Time-resolved measurements for single InGaN QDs reveal single exponential decays in contrast to non-exponential decays from the 2D wetting layer (WL) and from ensemble measurements. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Abstract:

Decay dynamics for single InGaN quantum dots are presented using time-resolved photoluminescence. The recombination is shown to be characterized by a single exponential decay, in contrast to the non-exponential recombination dynamics seen in the 2D wetting layer. The lifetimes of single dots in the temperature range 4-60 K decrease with increasing temperature. Different dots show similar lifetimes of ∼2 ns. © 2003 Elsevier B.V. All rights reserved.

Abstract:

A novel method for the growth of InGaN quantum dots (QDs) by metal-organic vapour phase epitaxy (MOVPE) is described. A thin InGaN epilayer is grown on a GaN buffer layer and then annealed at growth temperature in molecular nitrogen inducing QD formation. The photoluminescence from the dot ensemble is bright and comparable in intensity to that from a quantum well. Micro-photoluminescence studies of these QDs reveal sharp peaks with typical line widths of ∼250 μeV at 4.2 K. Time-resolved photoluminescence suggests that the excitons in these structures have lifetimes in excess of 2 ns at 4.2 K. © 2003 Elsevier B.V. All rights reserved.

Abstract:

Decay dynamics for single InGaN quantum dots are presented using time-resolved photoluminescence. The recombination is shown to be characterized by a single exponential decay, in contrast to the non-exponential recombination dynamics seen in the 2D wetting layer. The lifetimes of single dots in the temperature range 4-60 K decrease with increasing temperature. Different dots show similar lifetimes of similar to 2 ns. (C) 2003 Elsevier B.V. All rights reserved.

Abstract:

A novel method for the growth of InGaN quantum dots (QDs) by metal-organic vapour phase epitaxy (MOVPE) is described. A thin InGaN epilayer is grown on a GaN buffer layer and then annealed at growth temperature in molecular nitrogen inducing QD formation. The photolummescence from the dot ensemble is bright and comparable in intensity to that from a quantum well. Micro-photoluminescence studies of these QDs reveal sharp peaks with typical line widths of similar to250 mueV at 4.2 K. Time-resolved photoluminescence suggests that the excitons in these structures have lifetimes in excess of 2 ns at 4.2 K. (C) 2003 Elsevier B.V. All rights reserved.