Quantum Optoelectronics

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Sub-wavelength Al mask apertures for addressing individual InGaN quantum dots

Microelectronic Engineering 73-74 (2004) 762-766

Authors:

S Yasin, MN Khalid, JH Rice, RA Taylor

Abstract:

We describe a lithographic process for the fabrication of small size optical apertures, together with large alignment marks to locate the aperture position during measurements in an optical cryostat. The aperture size is chosen to isolate a small number of dots from a dense self-assembled array of InGaN dots. The pattern was exposed in a chemically-amplified resist, UVIII and transferred to the underlying aluminium layer using reactive ion etching. Micro-photoluminescence measurements show sharp spectral lines of width ∼700 μeV at 4.2 K (limited by the spectral resolution of the monochromator), confirming the isolation of a single quantum dot. © 2004 Elsevier B.V. All rights reserved.
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Photoluminescence studies of exciton recombination and dephasing in single InGaN quantum dots

IEEE TRANSACTIONS ON NANOTECHNOLOGY 3:3 (2004) 343-347

Authors:

JH Rice, JW Robinson, JD Smith, A Jarjour, RA Taylor, RA Oliver, GAD Briggs, MJ Kappers, S Yasin, CJ Humphreys
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Quantum dot emission from site-controlled InGaN/GaN micropyramid arrays

APPLIED PHYSICS LETTERS 85:19 (2004) 4281-4283

Authors:

PR Edwards, RW Martin, IM Watson, C Liu, RA Taylor, JH Rice, JH Na, JW Robinson, JD Smith
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Simulation of the quantum-confined stark effect in a single InGaN quantum dot

(2004) 5-6

Authors:

KH Lee, JW Robinson, JH Rice, JH Na, RA Taylor, RA Oliver, MJ Kappers, CJ Humphreys

Abstract:

By means of a 3D self-consistent numerical simulation we have calculated the effect of an externally-applied lateral electric field upon a single InGaN quantum dot. Overall, good agreement between the modeling and experimental results was observed. Modeling results support the observation that the quantum-confined Stark effect has both permanent dipole moment and polarizability components.
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Time-integrated and time-resolved photoluminescence studies of InGaN quantum dots

(2004) 568-572

Authors:

JW Robinson, JH Rice, A Jarjour, JD Smith, RA Taylor, RA Oliver, GAD Briggs, MJ Kappers, CJ Humphreys, S Yasin, Y Arakawa

Abstract:

We present studies of the optical transitions in InGaN quantum dots (QDs). Spatially-resolved micro-photoluminescence (mu-PL) of single InGaN QDs reveals very sharp, clearly-defined peaks that are characteristic of strongly-confined carriers. Time-resolved measurements for single InGaN QDs reveal single exponential decays in contrast to non-exponential decays from the 2D wetting layer (WL) and from ensemble measurements. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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