Quantum Optoelectronics

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Luminescence properties of isolated InGaN/GaN quantum dots

Physica Status Solidi A Applications and Materials Science 202:3 (2005) 372-376

Authors:

RW Martin, PR Edwards, RA Taylor, JH Rice, JH Na, JW Robinson, JD Smith, C Liu, IM Watson

Abstract:

In x Ga 1-xN quantum dots have been fabricated by the selective growth of GaN micro-pyramid arrays topped with InGaN/GaN quantum wells. The spatially- and spectrally-resolved luminescence properties of these structures were measured using low-temperature micro-photoluminescence spectroscopy, The presence of InGaN quantum dots was confirmed directly by the observation of sharp peaks in the emission spectrum at the pyramid apices. These luminescence peaks exhibit linewidths down to 650 μeV (limited by the spectrometer resolution). We describe the broadening of the luminescence peak from a single dot as a function of temperature and excitation power. © 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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Modeling the Nonlinear Photoluminescence Intensity Dependence Observed in Asymmetric GaN Quantum Discs with AlGaN Barriers

Institute of Electrical and Electronics Engineers (IEEE) (2005) 393-396

Authors:

KH Lee, S Birner, JH Na, RA Taylor, JW Robinson¹, JH Rice¹, YS Park, CM Park, TW Kang
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Biexciton and exciton dynamics in single InGaN quantum dots

NANOTECHNOLOGY 16:9 (2005) 1477-1481

Authors:

JH Rice, JW Robinson, JH Na, KH Lee, RA Taylor, DP Williams, EP O'Reilly, AD Andreev, Y Arakawa, S Yasin
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Luminescence properties of isolated InGaN/GaN quantum dots

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 202:3 (2005) 372-376

Authors:

RW Martin, PR Edwards, RA Taylor, JH Rice, JH Na, JW Robinson, JD Smith, C Liu, IM Watson
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Quantum Dot Emission from Selectively-Grown InGaN/GaN Micropyramid Arrays

AIP Conference Proceedings AIP 772 (2005) 865-866
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