Quantum Optoelectronics

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Photoluminescence studies of exciton recombination and dephasing in single InGaN quantum dots

IEEE TRANSACTIONS ON NANOTECHNOLOGY 3:3 (2004) 343-347

Authors:

JH Rice, JW Robinson, JD Smith, A Jarjour, RA Taylor, RA Oliver, GAD Briggs, MJ Kappers, S Yasin, CJ Humphreys
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Quantum dot emission from site-controlled InGaN/GaN micropyramid arrays

APPLIED PHYSICS LETTERS 85:19 (2004) 4281-4283

Authors:

PR Edwards, RW Martin, IM Watson, C Liu, RA Taylor, JH Rice, JH Na, JW Robinson, JD Smith
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Simulation of the quantum-confined stark effect in a single InGaN quantum dot

(2004) 5-6

Authors:

KH Lee, JW Robinson, JH Rice, JH Na, RA Taylor, RA Oliver, MJ Kappers, CJ Humphreys

Abstract:

By means of a 3D self-consistent numerical simulation we have calculated the effect of an externally-applied lateral electric field upon a single InGaN quantum dot. Overall, good agreement between the modeling and experimental results was observed. Modeling results support the observation that the quantum-confined Stark effect has both permanent dipole moment and polarizability components.
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Time-integrated and time-resolved photoluminescence studies of InGaN quantum dots

(2004) 568-572

Authors:

JW Robinson, JH Rice, A Jarjour, JD Smith, RA Taylor, RA Oliver, GAD Briggs, MJ Kappers, CJ Humphreys, S Yasin, Y Arakawa

Abstract:

We present studies of the optical transitions in InGaN quantum dots (QDs). Spatially-resolved micro-photoluminescence (mu-PL) of single InGaN QDs reveals very sharp, clearly-defined peaks that are characteristic of strongly-confined carriers. Time-resolved measurements for single InGaN QDs reveal single exponential decays in contrast to non-exponential decays from the 2D wetting layer (WL) and from ensemble measurements. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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Time-resolved gain saturation dynamics in InGaN multi-quantum well structures

PHYS STATUS SOLIDI C (2004) 2508-2511

Authors:

K Kyhm, JD Smith, RA Taylor, JF Ryan, Y Arakawa
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