Optoelectronic Properties of Tin-Lead Halide Perovskites.
ACS energy letters 6:7 (2021) 2413-2426
Abstract:Mixed tin-lead halide perovskites have recently emerged as highly promising materials for efficient single- and multi-junction photovoltaic devices. This Focus Review discusses the optoelectronic properties that underpin this performance, clearly differentiating between intrinsic and defect-mediated mechanisms. We show that from a fundamental perspective, increasing tin fraction may cause increases in attainable charge-carrier mobilities, decreases in exciton binding energies, and potentially a slowing of charge-carrier cooling, all beneficial for photovoltaic applications. We discuss the mechanisms leading to significant bandgap bowing along the tin-lead series, which enables attractive near-infrared bandgaps at intermediate tin content. However, tin-rich stoichiometries still suffer from tin oxidation and vacancy formation which often obscures the fundamentally achievable performance, causing high background hole densities, accelerating charge-carrier recombination, lowering charge-carrier mobilities, and blue-shifting absorption onsets through the Burstein-Moss effect. We evaluate impacts on photovoltaic device performance, and conclude with an outlook on remaining challenges and promising future directions in this area.
Hot electron cooling in InSb probed by ultrafast time-resolved terahertz cyclotron resonance
Physical Review B American Physical Society 103 (2021) 245205
Abstract:Measuring terahertz (THz) conductivity on an ultrafast time scale is an excellent way to observe charge-carrier dynamics in semiconductors as a function of time after photoexcitation. However, a conductivity measurement alone cannot separate the effects of charge-carrier recombination from effective mass changes as charges cool and experience different regions of the electronic band structure. Here we present a form of time-resolved magneto-THz spectroscopy which allows us to measure cyclotron effective mass on a picosecond time scale. We demonstrate this technique by observing electron cooling in the technologically-significant narrow-bandgap semiconductor indium antimonide (InSb). A significant reduction of electron effective mass from 0.032 me to 0.017 me is observed in the first 200 ps after injecting hot electrons. Measurement of electron effective mass in InSb as a function of photo-injected electron density agrees well with conduction band non-parabolicity predictions from ab initio calculations of the quasiparticle band structure.
Polarons and Charge Localization in Metal-Halide Semiconductors for Photovoltaic and Light-Emitting Devices.
Advanced materials (Deerfield Beach, Fla.) 33:24 (2021) e2007057
Abstract:Metal-halide semiconductors have shown excellent performance in optoelectronic applications such as solar cells, light-emitting diodes, and detectors. In this review the role of charge-lattice interactions and polaron formation in a wide range of these promising materials, including perovskites, double perovskites, Ruddlesden-Popper layered perovskites, nanocrystals, vacancy-ordered, and other novel structures, is summarized. The formation of Fröhlich-type "large" polarons in archetypal bulk metal-halide ABX3 perovskites and its dependence on A-cation, B-metal, and X-halide composition, which is now relatively well understood, are discussed. It is found that, for nanostructured and novel metal-halide materials, a larger variation in the strengths of polaronic effects is reported across the literature, potentially deriving from variations in potential barriers and the presence of interfaces at which lattice relaxation may be enhanced. Such findings are further discussed in the context of different experimental approaches used to explore polaronic effects, cautioning that firm conclusions are often hampered by the presence of alternate processes and interactions giving rise to similar experimental signatures. Overall, a complete understanding of polaronic effects will prove essential given their direct influence on optoelectronic properties such as charge-carrier mobilities and emission spectra, which are critical to the performance of energy and optoelectronic applications.
Charge-Carrier Mobility and Localization in Semiconducting Cu2AgBiI6 for Photovoltaic Applications.
ACS energy letters 6:5 (2021) 1729-1739
Abstract:Lead-free silver-bismuth semiconductors have become increasingly popular materials for optoelectronic applications, building upon the success of lead halide perovskites. In these materials, charge-lattice couplings fundamentally determine charge transport, critically affecting device performance. In this study, we investigate the optoelectronic properties of the recently discovered lead-free semiconductor Cu2AgBiI6 using temperature-dependent photoluminescence, absorption, and optical-pump terahertz-probe spectroscopy. We report ultrafast charge-carrier localization effects, evident from sharp THz photoconductivity decays occurring within a few picoseconds after excitation and a rise in intensity with decreasing temperature of long-lived, highly Stokes-shifted photoluminescence. We conclude that charge carriers in Cu2AgBiI6 are subject to strong charge-lattice coupling. However, such small polarons still exhibit mobilities in excess of 1 cm2 V-1 s-1 at room temperature because of low energetic barriers to formation and transport. Together with a low exciton binding energy of ∼29 meV and a direct band gap near 2.1 eV, these findings highlight Cu2AgBiI6 as an attractive lead-free material for photovoltaic applications.
Limits to electrical mobility in lead-halide perovskite semiconductors
Journal of Physical Chemistry Letters American Chemical Society 12:14 (2021) 3607-3617