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Charge trapping in polymer transistors probed by terahertz spectroscopy and scanning probe potentiometry

Applied Physics Letters 89 (2006) 112101 pp3

Authors:

MB Johnston, J. Lloyd-Hughes, T. Richards, H. Sirringhaus
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Charge trapping in polymer transistors probed by terahertz spectroscopy and scanning probe potentiometry

(2006)

Authors:

J Lloyd-Hughes, T Richards, H Sirringhaus, E Castro-Camus, LM Herz, MB Johnston
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Influence of copolymer interface orientation on the optical emission of polymeric semiconductor heterojunctions

Physical Review Letters 96 (2006) 117403 4pp

Authors:

LM Herz, Sreearunothai, P, Morteani, AC, Avilov, I
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Influence of mesoscopic ordering on the photoexcitation transfer dynamics in supramolecular assemblies of oligo-p-phenylenevinylene

CHEMICAL PHYSICS LETTERS 418:1-3 (2006) 196-201

Authors:

MH Chang, FJM Hoeben, P Jonkheijm, APHJ Schenning, EW Meijer, C Silva, LM Herz
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Light induced recovery of polymer field effect transistors

(2006) 482-482

Authors:

J Lloyd-Hughes, T Richards, E Castro-Camus, H Sirringhaus, MB Johnston, LM Herz

Abstract:

We have used differential terahertz spectroscopy to monitor performance degradation in state-of-the-art polymer field effect transistors (pFETs) based on poly[(9,9-dioetylfluorene-2,7-diyl)-co-(bithiophene)] (F8T2). After extended periods of operation holes are trapped in the polymer, increasing the device's threshold voltage. We monitor the trapped charge density using THz spectroscopy, and investigate the device's recovery as trapped holes are thermally removed. Illuminating the devices for a period with above-bandgap photons leads to a change in the terahertz transmission through the device, which is short lived after switching the light off.
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