Investigating pin-holes issues in Josephson junction travelling wave parametric amplifiers requiring large area of dielectric layer
Abstract:
Microwave superconducting Josephson Travelling Wave Parametric Amplifiers (JTWPAs) exploit the non-linear inductance of a long superconducting metamaterial line formed by thousands of Josephson junctions to achieve broadband parametric gain with quantum limited added noise. Nevertheless, pin-holes in the dielectric (spacer) layer required for fabricating these superconducting transmission lines (STLs) represent a challenge for JTWPAs fabrication. In this paper, we explore two pin-holes mitigation techniques, which shown promising results with DC characterisation of a suite of test structures at cryogenic temperatures. When implemented for actual JTWPA designs with much longer length, they have shown to improve the fabrication yield albeit some pin-holes still seems to exist over the large wafer area. This indicates that further mitigation effort is required to completely eradicate the pin-holes issue for applications requiring large area of dielectric layer such as microwave JTWPAs.Microstrip yagi antenna for ALMA band 11 receiver
International Journal of Terahertz Science and Technology
Abstract:
We present a planar Yagi antenna that has an end-fire beam characteristic and broad operational bandwidth. Two dipoles with different lengths are cascaded together to broaden the bandwidth. Printed directors and truncated ground plane are employed to achieve high front-to-back gain ratio. The double-dipole antenna is fed directly with a microstrip, and hence is readily adaptable to most of the millimetre and sub-millimetre detector circuits. In this paper, we present the antenna design in the context of designing a 1.05 THz Superconductor-Insulator-Superconductor (SIS) mixer that is suitable for Atacama Large Millimetre/Sub-millimetre Array (ALMA) Band 11 receiver. Detailed analysis of the antenna design is discussed, and simulated far field beam patterns and bandwidth performance is presented.Preliminary Characterisation of Titanium Nitride Thin Film at 300 mK for the Development of Kinetic Inductance Travelling Wave Parametric Amplifiers
Preliminary characterisation of titanium nitride thin film at 300 mK for the development of kinetic inductance travelling wave parametric amplifiers
Proceedings of the SPIE Photonex + Vacuum Technologies Society of Photo-optical Instrumentation Engineers 11881