Alumina nanoparticles enable optimal spray-coated perovskite thin film growth on self-assembled monolayers for efficient and reproducible photovoltaics

Journal of Materials Chemistry C Royal Society of Chemistry (RSC) 12:34 (2024) 13332-13342

Authors:

Elena J Cassella, Robert DJ Oliver, Timothy Thornber, Sophie Tucker, Rehmat Goodwin, David G Lidzey, Alexandra J Ramadan

Search for pair-produced higgsinos decaying via Higgs or ๐’ bosons to final states containing a pair of photons and a pair of ๐’ƒ-jets with the ATLAS detector

Physics Letters B Elsevier 856 (2024) 138938

Authors:

Alan Barr, Daniela Bortoletto, Federico Celli, Min Chen, Eimear Conroy, Amanda Cooper-Sarkar, Maxence Draguet, Gregor Eberwein, James Frost, Elizabeth Gallas, Claire Gwenlan, Christopher Hays, Brian Huffman, Simon Koch, Zhenlong Li, Koichi Nagai, Luka Nedic, Richard Nickerson, Eleonora Rossi, Alessandro Ruggiero, Elisabeth Schopf, Ian Shipsey, Iza Veliscek, Georg Viehhauser, Yajing Wei, Anthony Weidberg, Siyu Yan

Abstract:

A search is presented for the pair production of higgsinos ๐œ’หœ in gauge-mediated supersymmetry models, where the lightest neutralinos ๐œ’หœ 0 1 decay into a light gravitino ๐บหœ either via a Higgs โ„Ž or ๐‘ boson. The search is performed with the ATLAS detector at the Large Hadron Collider using 139 fbโˆ’1 of protonโ€“proton collisions at a centre-of-mass energy of โˆš ๐‘  = 13 TeV. It targets final states in which a Higgs boson decays into a photon pair, while the other Higgs or ๐‘ boson decays into a ๐‘๐‘ยฏ pair, with missing transverse momentum associated with the two gravitinos. Search regions dependent on the amount of missing transverse momentum are defined by the requirements that the diphoton mass should be consistent with the mass of the Higgs boson, and the ๐‘๐‘ยฏ mass with the mass of the Higgs or ๐‘ boson. The main backgrounds are estimated with data-driven methods using the sidebands of the diphoton mass distribution. No excesses beyond Standard Model expectations are observed and higgsinos with masses up to 320 GeV are excluded, assuming a branching fraction of 100% for ๐œ’หœ 0 1 โ†’ โ„Ž๐บหœ. This analysis excludes higgsinos with masses of 130 GeV for branching fractions to โ„Ž๐บหœ as low as 36%, thus providing complementarity to previous ATLAS searches in final states with multiple leptons or multiple ๐‘-jets, targeting different decays of the electroweak bosons.

Contrasting Ultra-Low Frequency Raman and Infrared Modes in Emerging Metal Halides for Photovoltaics

ACS Energy Letters American Chemical Society 9:8 (2024) 4127-4135

Authors:

Vincent J-Y Lim, Marcello Righetto, Siyu Yan, Jay B Patel, Thomas Siday, Benjamin Putland, Kyle M McCall, Maximilian T Sirtl, Yuliia Kominko, Jiali Peng, Qianqian Lin, Thomas Bein, Maksym Kovalenko, Henry J Snaith, Michael B Johnston, Laura M Herz

Abstract:

Lattice dynamics are critical to photovoltaic material performance, governing dynamic disorder, hot-carrier cooling, charge-carrier recombination, and transport. Soft metal-halide perovskites exhibit particularly intriguing dynamics, with Raman spectra exhibiting an unusually broad low-frequency response whose origin is still much debated. Here, we utilize ultra-low frequency Raman and infrared terahertz time-domain spectroscopies to provide a systematic examination of the vibrational response for a wide range of metal-halide semiconductors: FAPbI3, MAPbI x Br3โ€“x , CsPbBr3, PbI2, Cs2AgBiBr6, Cu2AgBiI6, and AgI. We rule out extrinsic defects, octahedral tilting, cation lone pairs, and โ€œliquid-likeโ€ Boson peaks as causes of the debated central Raman peak. Instead, we propose that the central Raman response results from an interplay of the significant broadening of Raman-active, low-energy phonon modes that are strongly amplified by a population component from Boseโ€“Einstein statistics toward low frequency. These findings elucidate the complexities of light interactions with low-energy lattice vibrations in soft metal-halide semiconductors emerging for photovoltaic applications.

In situ nanoscopy of single-grain nanomorphology and ultrafast carrier dynamics in metal halide perovskites

Nature Photonics Nature Research (2024)

In situ nanoscopy of single-grain nanomorphology and ultrafast carrier dynamics in metal halide perovskites

Nature Photonics Springer Nature 18:9 (2024) 975-981

Authors:

M Zizlsperger, S Nerreter, Q Yuan, Kb Lohmann, F Sandner, F Schiegl, C Meineke, Ya Gerasimenko, Lm Herz, T Siday, Ma Huber, Mb Johnston, R Huber

Abstract:

Designing next-generation light-harvesting devices requires a detailed understanding of the transport of photoexcited charge carriers. The record-breaking efficiencies of metal halide perovskite solar cells have been linked to effective charge-carrier diffusion, yet the exact nature of charge-carrier out-of-plane transport remains notoriously difficult to explain. The characteristic spatial inhomogeneity of perovskite films with nanograins and crystallographic disorder calls for the simultaneous and hitherto elusive in situ resolution of the chemical composition, the structural phase and the ultrafast dynamics of the local out-of-plane transport. Here we simultaneously probe the intrinsic out-of-plane charge-carrier diffusion and the nanoscale morphology by pushing depth-sensitive terahertz near-field nanospectroscopy to extreme subcycle timescales. In films of the organic–inorganic metal halide perovskite FA0.83Cs0.17Pb(I1−xClx)3 (where FA is formamidinium), domains of the cubic α-phase are clearly distinguished from the trigonal δ-phase and PbI2 nano-islands. By analysing deep-subcycle time shifts of the scattered terahertz waveform after photoexcitation, we access the vertical charge-carrier dynamics within single grains. At all of the measured locations, despite topographic irregularities, diffusion is surprisingly homogeneous on the 100 nm scale, although it varies between mesoscopic regions. Linking in situ carrier transport with nanoscale morphology and chemical composition could introduce a paradigm shift for the analysis and optimization of next-generation optoelectronics that are based on nanocrystalline materials.