Engineering Terahertz Detector Arrays Based on InAs Nanowire Photoconductive Switches

Institute of Electrical and Electronics Engineers (IEEE) 00 (2024) 1-2

Authors:

Hannah J Joyce, Jack A Alexander-Webber, Greg Chu, Jamie D Lake, Thomas Albrow-Owen, Michael B Johnston, H Hoe Tan, C Jagadish

In-situ nanoscopy of carrier dynamics and nanomorphology in metal halide perovskites

Institute of Electrical and Electronics Engineers (IEEE) 00 (2024) 1-2

Authors:

M Zizlsperger, S Nerreter, Q Yuan, KB Lohmann, F Sandner, F Schiegl, C Meineke, Y Gerasimenko, LM Herz, T Siday, MA Huber, MB Johnston, R Huber

Scalable Receivers Based on Horizontally-grown InAs Nanowires Promise All-fiber Terahertz Spectrometer Systems

Institute of Electrical and Electronics Engineers (IEEE) 00 (2024) 1-2

Authors:

Kun Peng, Nicholas Morgan, Ford Wagner, Thomas Siday, Chelsea Xia, Didem Dede, Victor Boureau, Valerio Piazza, Anna Fontcuberta I Morral, Michael Johnston

Semiconductor discovery with THz and millimeter-waves

Institute of Electrical and Electronics Engineers (IEEE) 00 (2024) 1-2

Direct and integrating sampling in terahertz receivers from wafer-scalable InAs nanowires

Nature Communications Springer Nature 15:1 (2024) 103

Authors:

Kun Peng, Nicholas Paul Morgan, Ford M Wagner, Thomas Siday, Chelsea Qiushi Xia, Didem Dede, Victor Boureau, Valerio Piazza, Anna Fontcuberta i Morral, Michael B Johnston

Abstract:

Terahertz (THz) radiation will play a pivotal role in wireless communications, sensing, spectroscopy and imaging technologies in the decades to come. THz emitters and receivers should thus be simplified in their design and miniaturized to become a commodity. In this work we demonstrate scalable photoconductive THz receivers based on horizontally-grown InAs nanowires (NWs) embedded in a bow-tie antenna that work at room temperature. The NWs provide a short photoconductivity lifetime while conserving high electron mobility. The large surface-to-volume ratio also ensures low dark current and thus low thermal noise, compared to narrow-bandgap bulk devices. By engineering the NW morphology, the NWs exhibit greatly different photoconductivity lifetimes, enabling the receivers to detect THz photons via both direct and integrating sampling modes. The broadband NW receivers are compatible with gating lasers across the entire range of telecom wavelengths (1.2–1.6 μm) and thus are ideal for inexpensive all-optical fibre-based THz time-domain spectroscopy and imaging systems. The devices are deterministically positioned by lithography and thus scalable to the wafer scale, opening the path for a new generation of commercial THz receivers.