The effects of doping density and temperature on the optoelectronic properties of formamidinium tin triiodide thin films

Advanced Materials Wiley 30:44 (2018) 1804506

Authors:

Rebecca L Milot, Matthew T Klug, Christopher Davies, Zhiping Wang, Hans AP Kraus, Henry J Snaith, Michael B Johnston, Laura M Herz

Abstract:

Intrinsic and extrinsic optoelectronic properties are unraveled for formamidinium tin triiodide (FASnI3) thin films, whose background hole doping density was varied through SnF2 addition during film fabrication. Monomolecular charge-carrier recombination exhibits both a dopant-mediated part that grows linearly with hole doping density and remnant contributions that remain under tin-enriched processing conditions. At hole densities near 1020 cm-3, a strong Burstein-Moss effect increases absorption onset energies by ~300meV beyond the band gap energy of undoped FASnI3 (shown to be 1.2 eV at 5 K and 1.35 eV at room temperature). At very high doping densities (1020 cm-3), temperature-dependent measurements indicate that the effective charge-carrier mobility is suppressed through scattering with ionized dopants. Once the background hole concentration is nearer 1019 cm-3 and below, the charge-carrier mobility increases with decreasing temperature according to ~T-1.2, suggesting it is limited mostly by intrinsic interactions with lattice vibrations. For the lowest doping concentration of 7.2´1018 cm^-3, charge-carrier mobilities reach a value of 67 cm2V-1s-1at room temperature and 470 cm2V-1s-1 at 50 K. Intra-excitonic transitions observed in the THz-frequency photoconductivity spectra at 5K reveal an exciton binding energy of only 3.1 meV for FASnI3, in agreement with the low bandgap energy exhibited by this perovskite.

Temperature-dependent refractive index of quartz at terahertz frequencies

Journal of Infrared, Millimeter and Terahertz Waves Springer Verlag 39:12 (2018) 1236-1248

Authors:

Christopher L Davies, Jay B Patel, Chelsea Q Xia, Laura M Herz, Michael Johnston

Abstract:

Characterisation of materials often requires the use of a substrate to support the sample being investigated. For optical characterisation at terahertz frequencies, quartz is commonly used owing to its high transmission and low absorption at these frequencies. Knowledge of the complex refractive index of quartz is required for analysis of time-domain terahertz spectroscopy and optical pump terahertz probe spectroscopy for samples on a quartz substrate. Here, we present the refractive index and extinction coefficient for α-quartz between 0.5 THz and 5.5 THz (17–183 cm^−1) taken at 10, 40, 80, 120, 160, 200 and 300 K. Quartz shows excellent transmission and is thus an ideal optical substrate over the THz band, apart from the region 3.9 ± 0.1 THz owing to a spectral feature originating from the lowest energy optical phonon modes. We also present the experimentally measured polariton dispersion of α-quartz over this frequency range.

Probing the photophysics of semiconductor nanomaterials using optical pump-terahertz probe spectroscopy: from nanowires to perovskites

SPIE, the international society for optics and photonics 10724 (2018) 107240f

Authors:

Hannah J Joyce, Lissa Eyre, Stephanie O Adeyemo, Sarwat A Baig, Jessica L Boland, Christopher L Davies, Michael B Johnston, Felix Deschler, H Hoe Tan, C Jagadish

Modification of the fluorinated tin oxide/electron-transporting material interface by a strong reductant and its effect on perovskite solar cell efficiency

Molecular Systems Design and Engineering Royal Society of Chemistry 3:5 (2018) 741-747

Authors:

F Pulvirenti, B Wegner, Nakita K Noel, Giulio Mazzotta, R Hill, Jay B Patel, Laura M Herz, Michael B Johnston, Moritz K Riede, Henry J Snaith, N Koch, S Barlow

Abstract:

To date, the most efficient hybrid metal halide peroskite solar cells employ TiO2 as electron-transporting material (ETM), making these devices unstable under UV light exposure. Replacing TiO2 with fullerene derivatives has been shown to result in improved electronic contact and increased device lifetime, making it of interest to assess whether similar improvements can be achieved by using other organic semiconductors as ETMs. In this work, we investigate perylene-3,4:9,10-tetracarboxylic bis(benzimidazole) as a vacuum-processable ETM, and we minimize electron-collection losses at the electron-selective contact by depositing pentamethylcyclopentadienyl cyclopentadienyl rhodium dimer, (RhCp*Cp)2, on fluorinated tin oxide. With (RhCp*Cp)2 as an interlayer, ohmic contacts can be formed, there is interfacial doping of the ETM, and stabilized power conversion efficiencies of up to 14.2% are obtained.

High irradiance performance of metal halide perovskites for concentrator photovoltaics

Nature Energy Nature Publishing Group 3 (2018) 855-861

Authors:

Zhiping Wang, Qianqian Lin, Bernard Wenger, Mark Greyson Christoforo, Yen-Hung Lin, Matthew T Klug, Michael B Johnston, Laura M Herz, Henry J Snaith

Abstract:

Traditionally, III–V multi-junction cells have been used in concentrator photovoltaic (CPV) applications, which deliver extremely high efficiencies but have failed to compete with ‘flat-plate’ silicon technologies owing to cost. Here, we assess the feasibility of using metal halide perovskites for CPVs, and we evaluate their device performance and stability under concentrated light. Under simulated sunlight, we achieve a peak efficiency of 23.6% under 14 Suns (that is, 14 times the standard solar irradiance), as compared to 21.1% under 1 Sun, and measure 1.26 V open-circuit voltage under 53 Suns, for a material with a bandgap of 1.63 eV. Importantly, our encapsulated devices maintain over 90% of their original efficiency after 150 h aging under 10 Suns at maximum power point. Our work reveals the potential of perovskite CPVs, and may lead to new PV deployment strategies combining perovskites with low-concentration factor and lower-accuracy solar tracking systems.