Near-infrared and short-wavelength infrared photodiodes based on dye-perovskite composites

Advanced Functional Materials Wiley 27:38 (2017) 1702485

Authors:

Q Lin, Z Wang, M Young, JB Patel, RL Milot, L Martinez Maestro, RR Lunt, HJ Snaith, MB Johnston, Laura Herz

Abstract:

Organohalide perovskites have emerged as promising light-sensing materials because of their superior optoelectronic properties and low-cost processing methods. Recently, perovskite-based photodetectors have successfully been demonstrated as both broadband and narrowband varieties. However, the photodetection bandwidth in perovskite-based photodetectors has so far been limited to the near-infrared regime owing to the relatively wide band gap of hybrid organohalide perovskites. In particular, short-wavelength infrared photodiodes operating beyond 1 μm have not yet been realized with organohalide perovskites. In this study, narrow band gap organic dyes are combined with hybrid perovskites to form composite films as active photoresponsive layers. Tuning the dye loading allows for optimization of the spectral response characteristics and excellent charge-carrier mobilities near 11 cm 2 V -1 s -1 , suggesting that these composites combine the light-absorbing properties or IR dyes with the outstanding charge-extraction characteristics of the perovskite. This study demonstrates the first perovskite photodiodes with deep near-infrared and short-wavelength infrared response that extends as far as 1.6 μm. All devices are solution-processed and exhibit relatively high responsivity, low dark current, and fast response at room temperature, making this approach highly attractive for next-generation light-detection techniques.

Charge-Carrier Dynamics in Hybrid Metal Halide Perovskites for Photovoltaics and Light Emission

Institute of Electrical and Electronics Engineers (IEEE) (2017) 1-1

Authors:

Rebecca L Milot, Michael B Johnston, Laura M Herz

Investigations of Doping Via Optical Pump Terahertz-Probe Spectroscopy

Institute of Electrical and Electronics Engineers (IEEE) (2017) 1-1

Authors:

Jessica L Boland, A Casadei, G Tütüncouglu, F Matteini, C Davies, F Gaveen, F Amaduzzi, HJ Joyce, LM Herz, A Fontcuberta I Morral, Michael B Johnston

Large-Scale Statistics for Threshold Optimization of Optically Pumped Nanowire Lasers.

Nano letters 17:8 (2017) 4860-4865

Authors:

Juan Arturo Alanis, Dhruv Saxena, Sudha Mokkapati, Nian Jiang, Kun Peng, Xiaoyan Tang, Lan Fu, Hark Hoe Tan, Chennupati Jagadish, Patrick Parkinson

Abstract:

Single nanowire lasers based on bottom-up III-V materials have been shown to exhibit room-temperature near-infrared lasing, making them highly promising for use as nanoscale, silicon-integrable, and coherent light sources. While lasing behavior is reproducible, small variations in growth conditions across a substrate arising from the use of bottom-up growth techniques can introduce interwire disorder, either through geometric or material inhomogeneity. Nanolasers critically depend on both high material quality and tight dimensional tolerances, and as such, lasing threshold is both sensitive to and a sensitive probe of such inhomogeneity. We present an all-optical characterization technique coupled to statistical analysis to correlate geometrical and material parameters with lasing threshold. For these multiple-quantum-well nanolasers, it is found that low threshold is closely linked to longer lasing wavelength caused by losses in the core, providing a route to optimized future low-threshold devices. A best-in-group room temperature lasing threshold of ∼43 μJ cm-2 under pulsed excitation was found, and overall device yields in excess of 50% are measured, demonstrating a promising future for the nanolaser architecture.

Band-tail recombination in hybrid lead iodide perovskite

Advanced Functional Materials Wiley (2017)

Authors:

AD Wright, Rebecca L Milot, GE Eperon, Henry J Snaith, Laura Johnston, Michael B Herz

Abstract:

Traps limit the photovoltaic efficiency and affect the charge transport of optoelectronic devices based on hybrid lead halide perovskites. Understanding the nature and energy scale of these trap states is therefore crucial for the development and optimization of solar cell and laser technology based on these materials. Here, the low-temperature photoluminescence of formamidinium lead triiodide (HC(NH2)2PbI3) is investigated. A power-law time dependence in the emission intensity and an additional low-energy emission peak that exhibits an anomalous relative Stokes shift are observed. Using a rate-equation model and a Monte Carlo simulation, it is revealed that both phenomena arise from an exponential trap-density tail with characteristic energy scale of ≈3 meV. Charge-carrier recombination from sites deep within the tail is found to cause emission with energy downshifted by up to several tens of meV. Hence, such phenomena may in part be responsible for open-circuit voltage losses commonly observed in these materials. In this high-quality hybrid perovskite, trap states thus predominantly comprise a continuum of energetic levels (associated with disorder) rather than discrete trap energy levels (associated, e.g., with elemental vacancies). Hybrid perovskites may therefore be viewed as classic semiconductors whose bandstructure picture is moderated by a modest degree of energetic disorder.