Terahertz photonics

Abstract:

Reliable doping in GaAs nanowires is essential for the development of novel optoelectronic devices. Previously, GaAs nanowires have been shown to exhibit extremely short photoconductivity lifetimes of a few picoseconds due to their high surface recombination velocity, which is detrimental for nanowire devices, such as solar cells and nanowire lasers. Here, we show that, by exploiting engineered band-bending via selective doping, this parasitic surface recombination can be reduced. We utilise non-contact time-resolved terahertz spectroscopy to characterise the doping efficiency in n-type and p-type doped GaAs nanowire8 and show high carrier concentrations of the order of 1018 cm-3. The carrier lifetimes were increased by an order of magnitude from 0.13ns for undoped to 3.8ns and 2.5ns for n-doped and p-doped GaAs nanowires respectively; showing that surface recombination is greatly suppressed as a result of shell doping. We also present a novel effect of p-doping in GaAs nanowires: a rapid decay in photoconductivity within 25ps after photoexcitation. This fast decay is attributed to rapid electron trapping at the nanowire surface due to doping related band bending. Thus, we demonstrate the advantages of selective doping for enhancement of desirable transport properties in GaAs nanowires, as well as highlighting terahertz spectroscopy as a reliable technique for characterising doped GaAs nanowires1.

Abstract:

Multi-junction solar photovoltaics are proven to deliver the highest performance of any solar cell architecture, making them ideally suited for deployment in an increasingly efficiency driven solar industry. Conventional multi-junction cells reach up to 45% efficiency, but are so costly to manufacture that they are only currently useful for space and solar concentrator photovoltaics. Here, we demonstrate the first four and two-terminal perovskite-perovskite tandem solar cells with ideally matched bandgaps. We develop an infrared absorbing 1.2eV bandgap perovskite, FA0.75Cs0.25Sn0.5Pb0.5I3, which is capable of delivering 13.6% efficiency. By combining this material with a wider bandgap FA0.83Cs0.17Pb(I0.5Br0.5)3 material, we reach initial monolithic two terminal tandem efficiencies of 14.0 % with over 1.75 V open circuitvoltage. We also make mechanically stacked four terminal tandem cells and obtain 18.1 % efficiency for small cells, and 16.0 % efficiency for 1cm^2 cells. Crucially, we find that our infrared absorbing perovskite cells exhibit excellent thermal and atmospheric stability, unprecedented for Sn based perovskites. This device architecture and materials set will enable “all perovskite” thin film solar cells to reach the highest efficiencies in the long term at the lowest costs, delivering a viable photovoltaic technology to supplant fossil fuels.

Abstract:

Hybrid metal-halide perovskites have potential as cost-effective gain media for laser technology because of their superior optoelectronic properties. Although lead-halide perovskites have been most widely studied to date, tin-based perovskites have been proposed as a less toxic alternative. In this Letter, we show that amplified spontaneous emission (ASE) in formamidinium tin triiodide (FASnI3) thin films is supported by an observed radiative monomolecular charge recombination pathway deriving from its unintentional doping. Such a radiative component will be active even at the lowest charge-carrier densities, opening a pathway for ultralow light-emission thresholds. Using time-resolved THz photoconductivity analysis, we further show that the material has an unprecedentedly high charge-carrier mobility of 22 cm(2) V(-1) s(-1) favoring efficient transport. In addition, FASnI3 exhibits strong radiative bimolecular recombination and Auger rates that are over an order of magnitude lower than for lead-halide perovskites. In combination, these properties reveal that tin-halide perovskites are highly suited to light-emitting devices.