Influence of surface passivation on ultrafast carrier dynamics and terahertz radiation generation in GaAs

Applied Physics Letters 89:23 (2006)

Authors:

J Lloyd-Hughes, SKE Merchant, L Fu, HH Tan, C Jagadish, E Castro-Camus, MB Johnston

Abstract:

The carrier dynamics of photoexcited electrons in the vicinity of the surface of (N H4) 2 S -passivated GaAs were studied via terahertz emission spectroscopy and optical-pump terahertz-probe spectroscopy. Terahertz emission spectroscopy measurements, coupled with Monte Carlo simulations of terahertz emission, revealed that the surface electric field of GaAs reverses after passivation. The conductivity of photoexcited electrons was determined via optical-pump terahertz-probe spectroscopy and was found to double after passivation. These experiments demonstrate that passivation significantly reduces the surface state density and surface recombination velocity of GaAs. Finally, it was demonstrated that passivation leads to an enhancement in the power radiated by photoconductive switch terahertz emitters, thereby showing the important influence of surface chemistry on the performance of ultrafast terahertz photonic devices. © 2006 American Institute of Physics.

Polarization sensitive terahertz time domain spectroscopy

Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006 (2006)

Authors:

E Castro-Camus, J Lloyd-Hughes, MD Fraser, HH Tan, C Jagadish, MB Johnston

Abstract:

We present a terahertz radiation detector that measures both transverse components of a terahertz single cycle's electric field, allowing the study of polarization dependent properties of materials. Measurements of birefringence in quartz are presented. © 2006 Optical Society of America.

Terahertz emission and lifetime measurements of ion-implanted semiconductors: Experiment and simulation

Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006 (2006)

Authors:

J Lloyd-Hughes, E Castro-Camus, MD Fraser, HH Tan, C Jagadish, MB Johnston

Abstract:

The spectral width of terahertz emission from ion-implanted terahertz emitters increases with ion damage, owing to ultrafast carrier capture. Carrier dynamics simulations reinforce these findings. Optical-pump, terahertz-probe experiments confirm the subpicosecond lifetimes of these materials. © 2006 Optical Society of America.

Influence of surface passivation on ultrafast carrier dynamics and terahertz radiation generation in GaAs

(2006)

Authors:

J Lloyd-Hughes, SKE Merchant, F Lan, HH Tan, C Jagadish, E Castro-Camus, MB Johnston

Longitudinal electron bunch profile diagnostics at 45 MeV using coherent Smith-Purcell radiation

Physical Review Special Topics - Accelerators and Beams 9:9 (2006)

Authors:

G Doucas, V Blackmore, B Ottewell, C Perry, PG Huggard, E Castro-Camus, MB Johnston, JL Hughes, MF Kimmitt, B Redlich, A Van Der Meer

Abstract:

We have used coherent Smith-Purcell radiation in order to investigate the longitudinal (temporal) profile of the electron bunch at the FELIX facility. Detection of the far-infrared radiation was achieved by a simple and compact experimental arrangement, consisting of an array of 11 room-temperature pyroelectric detectors. Accurate determination of the background radiation, use of high quality optical filters, and an efficient light collection system are essential for this type of experiment. The radiated power is in good agreement with the predictions of the surface current description of this process. It is concluded that 90% of the bunch particles are contained within 5.5 ps, with a temporal profile that could be approximately triangular in shape. © 2006 The American Physical Society.